Infineon IPT60R Type N-Channel MOSFET, 75 A, 600 V Enhancement, 8-Pin HSOF IPT60R028G7XTMA1
- RS庫存編號:
- 222-4938
- 製造零件編號:
- IPT60R028G7XTMA1
- 製造商:
- Infineon
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HK$113.30
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- 從 2027年6月14日 發貨
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單位 | 每單位 |
|---|---|
| 1 - 9 | HK$113.30 |
| 10 - 99 | HK$110.50 |
| 100 - 249 | HK$107.70 |
| 250 - 499 | HK$104.90 |
| 500 + | HK$102.40 |
* 參考價格
- RS庫存編號:
- 222-4938
- 製造零件編號:
- IPT60R028G7XTMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPT60R | |
| Package Type | HSOF | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 28mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 123nC | |
| Forward Voltage Vf | 0.8V | |
| Maximum Power Dissipation Pd | 391W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.4mm | |
| Standards/Approvals | No | |
| Length | 10.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPT60R | ||
Package Type HSOF | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 28mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 123nC | ||
Forward Voltage Vf 0.8V | ||
Maximum Power Dissipation Pd 391W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 2.4mm | ||
Standards/Approvals No | ||
Length 10.1mm | ||
Automotive Standard No | ||
The Infineon CoolMOS™ C7 Gold superjunction MOSFET series (G7) brings together the benefits of the improved 600V CoolMOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC.
Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G
Enables best-in-class R DS(on) in smallest footprint
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