Infineon BSS127I N-Channel MOSFET, 21 mA, 600 V Enhancement, 3-Pin SOT-23 BSS127IXTSA1
- RS庫存編號:
- 225-0559
- 製造零件編號:
- BSS127IXTSA1
- 製造商:
- Infineon
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HK$110.20
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單位 | 每單位 | 每包* |
|---|---|---|
| 100 - 100 | HK$1.102 | HK$110.20 |
| 200 - 200 | HK$1.081 | HK$108.10 |
| 300 - 300 | HK$1.061 | HK$106.10 |
| 400 - 400 | HK$1.044 | HK$104.40 |
| 500 + | HK$1.024 | HK$102.40 |
* 參考價格
- RS庫存編號:
- 225-0559
- 製造零件編號:
- BSS127IXTSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | SOT-23 | |
| Series | BSS127I | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.65nC | |
| Maximum Power Dissipation Pd | 0.5W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.7mm | |
| Standards/Approvals | No | |
| Height | 1.8mm | |
| Width | 3.7mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type SOT-23 | ||
Series BSS127I | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.65nC | ||
Maximum Power Dissipation Pd 0.5W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 6.7mm | ||
Standards/Approvals No | ||
Height 1.8mm | ||
Width 3.7mm | ||
Automotive Standard No | ||
Infineon BSS127I Series MOSFET, 600V Maximum Drain Source Voltage, 21mA Maximum Continuous Drain Current - BSS127IXTSA1
This MOSFET is a Compact N-channel enhancement device designed for general switching in surface-mount applications across a wide ambient range. It is intended for circuits requiring a high-voltage transistor with modest current capability and a standard three-pin SOT-23 package for board-level integration.
Features and Benefits:
• 600V drain tolerance enables high-voltage switching capability
• 0.5W power dissipation limits thermal load in tight designs
• 21mA continuous drain current suits low-current signal switching
• 0.65nC gate charge supports Faster gate transitions with low drive
• 600Ω drain-source resistance provides predictable off-state leakage
• 20V gate rating permits Interface with common logic-level drivers
• 0.5W power dissipation limits thermal load in tight designs
• 21mA continuous drain current suits low-current signal switching
• 0.65nC gate charge supports Faster gate transitions with low drive
• 600Ω drain-source resistance provides predictable off-state leakage
• 20V gate rating permits Interface with common logic-level drivers
Applications
• Suitable for high-voltage signal switching in control circuits
• Ideal for low-current power steering of relays and solenoids
• Used with logic drivers where low gate charge reduces losses
• Can be used for board-mounted level-shift and protection circuits
• Appropriate for Compact surface-mount modules requiring small packages
• Ideal for low-current power steering of relays and solenoids
• Used with logic drivers where low gate charge reduces losses
• Can be used for board-mounted level-shift and protection circuits
• Appropriate for Compact surface-mount modules requiring small packages
What temperature range can it tolerate in industrial settings?
It operates reliably from -55°C up to 150°C.
How does the device’s diode-related characteristic affect designs?
The forward conduction threshold is 1.2V which informs diode conduction considerations in circuits.
What mounting and pin-count considerations should designers note?
It is supplied in a SOT-23 surface-mount outline with three pins for straightforward PCB placement.
How does the transistor’s package size influence layout density?
The package measures 6.7 x 3.7 x 1.8 mm, allowing Compact placement while maintaining thermal constraints.
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