Infineon BSS127I Type N-Channel MOSFET, 21 mA, 600 V Enhancement, 3-Pin SOT-23 BSS127IXTSA1
- RS庫存編號:
- 225-0559
- 製造零件編號:
- BSS127IXTSA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 100 件）*
HK$73.40
訂單超過 HK$250.00 免費送貨
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- 1,400 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 100 - 100 | HK$0.734 | HK$73.40 |
| 200 - 200 | HK$0.72 | HK$72.00 |
| 300 - 300 | HK$0.707 | HK$70.70 |
| 400 - 400 | HK$0.695 | HK$69.50 |
| 500 + | HK$0.682 | HK$68.20 |
* 參考價格
- RS庫存編號:
- 225-0559
- 製造零件編號:
- BSS127IXTSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 21mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | SOT-23 | |
| Series | BSS127I | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.65nC | |
| Maximum Power Dissipation Pd | 0.5W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.7mm | |
| Length | 6.7mm | |
| Height | 1.8mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 21mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type SOT-23 | ||
Series BSS127I | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.65nC | ||
Maximum Power Dissipation Pd 0.5W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Width 3.7mm | ||
Length 6.7mm | ||
Height 1.8mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon BSS127I is the small signal, small power N- and P-channel MOSFETs provide a wide range of VGS(th) levels and RDS(on) values, as well as multiple voltage classes. This MOSFET have enhancement and depletion-mode options.
PCB-space and cost savings
Gate drive flexibility
Reduced design complexity
Environmentally friendly
High overall efficiency
相关链接
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