Dual N-Channel MOSFET, 32 A, 650 V, 4-Pin PowerPAK 8 x 8 Vishay SiHH080N60E-T1-GE3
- RS庫存編號:
- 228-2873
- 製造零件編號:
- SiHH080N60E-T1-GE3
- 製造商:
- Vishay
2984 現貨庫存，可於3工作日發貨。
單價 个（每托盘 2 ）
HK$37.24
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 48 | HK$37.24 | HK$74.48 |
| 50 - 98 | HK$36.12 | HK$72.24 |
| 100 - 248 | HK$35.035 | HK$70.07 |
| 250 - 998 | HK$33.98 | HK$67.96 |
| 1000 + | HK$32.97 | HK$65.94 |
* 參考價格
- RS庫存編號:
- 228-2873
- 製造零件編號:
- SiHH080N60E-T1-GE3
- 製造商:
- Vishay
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
The Vishay E Series Power MOSFET reduced switching and conduction losses.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Low effective capacitance (Co(er))
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
規格
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 32 A |
| Maximum Drain Source Voltage | 650 V |
| Series | E Series |
| Package Type | PowerPAK 8 x 8 |
| Mounting Type | Surface Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 0.08 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Transistor Material | Si |
| Number of Elements per Chip | 2 |