Vishay TrenchFET Type N-Channel MOSFET, 77.4 A, 150 V Enhancement, 8-Pin SO-8 SiR570DP-T1-RE3
- RS庫存編號:
- 228-2906
- 製造零件編號:
- SiR570DP-T1-RE3
- 製造商:
- Vishay
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小計（1 包，共 5 件）*
HK$98.40
訂單超過 HK$250.00 免費送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | HK$19.68 | HK$98.40 |
| 50 - 95 | HK$19.32 | HK$96.60 |
| 100 - 245 | HK$18.98 | HK$94.90 |
| 250 - 995 | HK$18.64 | HK$93.20 |
| 1000 + | HK$18.30 | HK$91.50 |
* 參考價格
- RS庫存編號:
- 228-2906
- 製造零件編號:
- SiR570DP-T1-RE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 77.4A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 46.9nC | |
| Maximum Power Dissipation Pd | 104W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 77.4A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 46.9nC | ||
Maximum Power Dissipation Pd 104W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay TrenchFET N-channel is 150 V MOSFET.
100 % Rg and UIS tested
相关链接
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