Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 69.3 A, 30 V Enhancement, 8-Pin PowerPAIR 3 x 3S SiZ340BDT-T1-GE3
- RS庫存編號:
- 228-2939
- 製造零件編號:
- SiZ340BDT-T1-GE3
- 製造商:
- Vishay
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查看批量定價選項小計（1 包，共 25 件）*
HK$133.50
訂單超過 HK$250.00 免費送貨
有庫存
- 加上 5,950 件從 2026年6月08日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | HK$5.34 | HK$133.50 |
| 50 - 75 | HK$5.244 | HK$131.10 |
| 100 - 225 | HK$5.148 | HK$128.70 |
| 250 - 975 | HK$5.056 | HK$126.40 |
| 1000 + | HK$4.968 | HK$124.20 |
* 參考價格
- RS庫存編號:
- 228-2939
- 製造零件編號:
- SiZ340BDT-T1-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 69.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAIR 3 x 3S | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00856Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 31W | |
| Typical Gate Charge Qg @ Vgs | 8.4nC | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 69.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAIR 3 x 3S | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00856Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 31W | ||
Typical Gate Charge Qg @ Vgs 8.4nC | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay Dual N-Channel 30-V (D-S) MOSFET.
100 % Rg and UIS tested
相关链接
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