Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 258 A, 30 V Enhancement, 8-Pin PowerPAIR 6 x 5F SiZF928DT-T1-GE3
- RS庫存編號:
- 228-2943
- 製造零件編號:
- SiZF928DT-T1-GE3
- 製造商:
- Vishay
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HK$114.40
訂單超過 HK$250.00 免費送貨
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- 加上 12,650 件從 2026年8月17日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | HK$22.88 | HK$114.40 |
| 50 - 95 | HK$22.20 | HK$111.00 |
| 100 - 245 | HK$21.54 | HK$107.70 |
| 250 - 995 | HK$20.88 | HK$104.40 |
| 1000 + | HK$20.26 | HK$101.30 |
* 參考價格
- RS庫存編號:
- 228-2943
- 製造零件編號:
- SiZF928DT-T1-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 258A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAIR 6 x 5F | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00245Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 18.5nC | |
| Maximum Power Dissipation Pd | 74W | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 258A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAIR 6 x 5F | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00245Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 18.5nC | ||
Maximum Power Dissipation Pd 74W | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay Dual N-Channel 30 V MOSFET.
100 % Rg and UIS tested
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