STMicroelectronics SCTWA70N120G2V-4 N-Channel MOSFET, 91 A, 1.2 kV Enhancement, 4-Pin Hip-247 SCTWA70N120G2V-4
- RS庫存編號:
- 233-0475
- 製造零件編號:
- SCTWA70N120G2V-4
- 製造商:
- STMicroelectronics
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HK$512.70
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單位 | 每單位 |
|---|---|
| 1 - 4 | HK$512.70 |
| 5 - 9 | HK$502.40 |
| 10 - 14 | HK$487.40 |
| 15 - 19 | HK$477.80 |
| 20 + | HK$473.10 |
* 參考價格
- RS庫存編號:
- 233-0475
- 製造零件編號:
- SCTWA70N120G2V-4
- 製造商:
- STMicroelectronics
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 91A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Series | SCTWA70N120G2V-4 | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Forward Voltage Vf | 2.7V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Maximum Power Dissipation Pd | 547W | |
| Maximum Operating Temperature | 200°C | |
| Length | 34.8mm | |
| Standards/Approvals | No | |
| Width | 15.6mm | |
| Height | 5mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 91A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Series SCTWA70N120G2V-4 | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Forward Voltage Vf 2.7V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22V | ||
Maximum Power Dissipation Pd 547W | ||
Maximum Operating Temperature 200°C | ||
Length 34.8mm | ||
Standards/Approvals No | ||
Width 15.6mm | ||
Height 5mm | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Very high operating junction temperature capability (TJ = 200 °C)
Source sensing pin for increased efficiency
相关链接
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