Infineon IPTC N-Channel MOSFET, 396 A, 80 V Enhancement, 16-Pin HDSOP IPTC012N08NM5ATMA1

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2 - 8HK$79.40HK$158.80
10 - 98HK$77.80HK$155.60
100 - 248HK$76.25HK$152.50
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包裝方式:
RS庫存編號:
233-4373
製造零件編號:
IPTC012N08NM5ATMA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

396A

Maximum Drain Source Voltage Vds

80V

Package Type

HDSOP

Series

IPTC

Mount Type

Surface

Pin Count

16

Maximum Drain Source Resistance Rds

1.2mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

375W

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

175nC

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Length

10.1mm

Height

2.35mm

Standards/Approvals

No

Width

10.3mm

Automotive Standard

No

The Infineon IPTC012N08NM5 is part of OptiMOS 5 power MOSFET in TOLT in that TO-Leaded top side-cooling package for superior thermal performance. This innovative package combined with the key features of OptiMOS 5 technology allows best-in-class products in 80 V as well as high current rating 300 A for high power density designs. With top side-cooling setup the drain is exposed at the surface of the package and 95 percent of the heat dissipation can be promoted directly to the heatsink achieving 20 percent better RthJA and 50 percent improved RthJC compared to TOLL package. With bottom side cooling packages like TOLL or D2PAK, the heat is dissipated via the PCB to the heatsink causing high power losses.

Negative stand-off

Saving in cooling system

Increased system efficiency enabling extended battery life time

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