Infineon BSC N-Channel MOSFET, 381 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSC059N04LS6ATMA1
- RS庫存編號:
- 243-9329
- 製造零件編號:
- BSC059N04LS6ATMA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計(1 包,共 5 件)*
HK$57.40
訂單超過 HK$250.00 免費送貨
有庫存
- 加上 2,120 件從 2026年10月26日 起發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | HK$11.48 | HK$57.40 |
| 10 - 95 | HK$11.18 | HK$55.90 |
| 100 - 245 | HK$10.94 | HK$54.70 |
| 250 - 495 | HK$10.68 | HK$53.40 |
| 500 + | HK$10.40 | HK$52.00 |
* 參考價格
- RS庫存編號:
- 243-9329
- 製造零件編號:
- BSC059N04LS6ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 381A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | BSC | |
| Package Type | SuperSO8 5 x 6 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 381A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series BSC | ||
Package Type SuperSO8 5 x 6 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon BSC Series MOSFET, 81W Maximum Power Dissipation, 40V Maximum Drain Source Voltage - BSC059N04LS6ATMA1
This MOSFET is a surface-mount N-channel transistor designed for high-current switching and power conversion in demanding thermal environments. It supports operation across a wide temperature range and is intended for use where low conduction losses and Rapid gate control are required.
Features and Benefits:
• 40 V drain capability enables medium-voltage switching applications
• 381 A continuous current supports heavy-current loads
• 0.7 mΩ RDS(on) reduces conduction losses at high currents
• 81 W power dissipation allows sustained thermal loading
• 80 nC typical gate charge enables responsive switching transitions
• 20 V gate rating permits substantial gate-drive amplitude
• 381 A continuous current supports heavy-current loads
• 0.7 mΩ RDS(on) reduces conduction losses at high currents
• 81 W power dissipation allows sustained thermal loading
• 80 nC typical gate charge enables responsive switching transitions
• 20 V gate rating permits substantial gate-drive amplitude
Applications
• Suitable for high-current DC-DC converters
• Ideal for synchronous rectification in power supplies
• Used with motor drivers requiring high continuous current
• Can be used for battery protection and power distribution
• Suitable for Compact surface-mount power modules
• Ideal for synchronous rectification in power supplies
• Used with motor drivers requiring high continuous current
• Can be used for battery protection and power distribution
• Suitable for Compact surface-mount power modules
What package type is used for Compact PCB assembly?
It is supplied in a SuperSO8 5x6 mm package suitable for surface mounting.
What thermal range can it withstand during operation?
The device operates from −55 °C up to 175 °C for wide-temperature deployments.
What gate-drive considerations should be observed?
The maximum gate-to-source rating is 20 V and typical gate charge is 80 nC, so drive circuits must source sufficient charge for the desired switching speed.
How does it comply with environmental restrictions?
It meets RoHS requirements for restricted-substance compliance.
相关链接
- Infineon BSC N-Channel MOSFET 40 V N, 8-Pin SuperSO8 5 x 6 BSC059N04LS6ATMA1
- Infineon BSC N-Channel MOSFET 40 V N, 8-Pin SuperSO8 5 x 6
- Infineon BSC N-Channel MOSFET 40 V N, 8-Pin SuperSO8 5 x 6 BSC0901NSIATMA1
- Infineon BSC N-Channel MOSFET 40 V N, 8-Pin SuperSO8 5 x 6 BSC0901NSATMA1
- Infineon BSC N-Channel MOSFET 40 V N, 8-Pin SuperSO8 5 x 6 BSC0501NSIATMA1
- Infineon BSC N-Channel MOSFET 40 V N, 8-Pin SuperSO8 5 x 6 BSC0902NSIATMA1
- Infineon BSC N-Channel MOSFET 40 V N, 8-Pin SuperSO8 5 x 6 BSC0904NSIATMA1
- Infineon BSC N-Channel MOSFET 40 V N, 8-Pin SuperSO8 5 x 6 BSC0504NSIATMA1
