Infineon BSC N-Channel MOSFET, 381 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSC0901NSATMA1
- RS庫存編號:
- 244-1555
- 製造零件編號:
- BSC0901NSATMA1
- 製造商:
- Infineon
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HK$53.90
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | HK$10.78 | HK$53.90 |
| 10 - 95 | HK$10.46 | HK$52.30 |
| 100 - 245 | HK$10.28 | HK$51.40 |
| 250 - 495 | HK$9.96 | HK$49.80 |
| 500 + | HK$9.80 | HK$49.00 |
* 參考價格
- RS庫存編號:
- 244-1555
- 製造零件編號:
- BSC0901NSATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 381A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | BSC | |
| Package Type | SuperSO8 5 x 6 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 381A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series BSC | ||
Package Type SuperSO8 5 x 6 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon BSC Series MOSFET, 40V Maximum Drain Source Voltage, 381A Maximum Continuous Drain Current - BSC0901NSATMA1
This MOSFET is an N-channel semiconductor switch designed for high-current power conversion and surface-mounted applications on Compact boards. It operates across a broad temperature span and is suitable where robust drain-to-source performance and controlled gate drive are required.
Features and Benefits:
• 40V maximum drain-to-source voltage enables mid-voltage power stages
• 381A continuous drain current supports high-current delivery
• 0.7mΩ low Rds(on) reduces conduction losses at heavy load
• 81W power dissipation permits substantial thermal handling
• 80nC typical gate charge allows predictable switching energy
• 20V gate-rating provides wide gate-drive margin for control
• 381A continuous drain current supports high-current delivery
• 0.7mΩ low Rds(on) reduces conduction losses at heavy load
• 81W power dissipation permits substantial thermal handling
• 80nC typical gate charge allows predictable switching energy
• 20V gate-rating provides wide gate-drive margin for control
Applications
• Suitable for DC-DC converter primary switching stages
• Ideal for high-current power conversion modules
• Used with surface-mount assemblies requiring Compact MOSFETs
• Can be used for synchronous rectification in power supplies
• Suitable for high-current battery management circuits
• Ideal for high-current power conversion modules
• Used with surface-mount assemblies requiring Compact MOSFETs
• Can be used for synchronous rectification in power supplies
• Suitable for high-current battery management circuits
What temperature range can it operate within?
It functions across −55°C to +150°C, accommodating extreme thermal environments.
What package is used for mounting on Compact PCBs?
It is supplied in a SuperSO8 5x6 mm surface-mount package for dense layouts.
How does the gate charge affect switching design?
The 80nC gate charge defines the drive energy and influences switching losses and driver sizing.
What is the forward voltage during conduction?
The forward voltage is specified at 1V, indicating its conduction drop under defined conditions.
Are there specific approvals or environmental standards noted?
It complies with RoHS requirements for restricted substances.
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