Infineon IAUZ Type N-Channel MOSFET, 100 A, 1200 V Enhancement, 8-Pin AG-EASY2B
- RS庫存編號:
- 250-0217
- 製造零件編號:
- F3L8MR12W2M1HPB11BPSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 托盤，共 18 件）*
HK$19,296.198
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2026年8月10日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每托盤* |
|---|---|---|
| 18 - 18 | HK$1,072.011 | HK$19,296.20 |
| 36 - 36 | HK$1,050.572 | HK$18,910.30 |
| 54 + | HK$1,029.567 | HK$18,532.21 |
* 參考價格
- RS庫存編號:
- 250-0217
- 製造零件編號:
- F3L8MR12W2M1HPB11BPSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | AG-EASY2B | |
| Series | IAUZ | |
| Mount Type | Screw | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type AG-EASY2B | ||
Series IAUZ | ||
Mount Type Screw | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon CoolSiC MOSFET EasyPACK™ 2B 1200 V / 8 mΩ 3-Level module with CoolSiC™ MOSFET with enhanced generation 1, integrated NTC temperature sensor, pre-applied thermal interface material and PressFIT Contact Technology.
High current density
Low switching losses
Rugged mounting due to integrated mounting clamps
Integrated NTC temperature sensor
PressFIT contact technology
Pre-applied thermal interface material
相关链接
- Infineon IAUZ Type N-Channel MOSFET 1200 V Enhancement, 8-Pin AG-EASY2B F3L8MR12W2M1HPB11BPSA1
- Infineon FF6MR Type N-Channel MOSFET 1200 V Enhancement AG-EASY2B FF6MR20W2M1HB70BPSA1
- Infineon Half Bridge XHP 2 N channel-Channel MOSFET Modules 1200 V Enhancement, 8-Pin AG-EASY2B
- Infineon F3L6MR Type N-Channel MOSFET 2000 V Enhancement AG-EASY2B F3L6MR20W2M1HB70BPSA1
- Infineon Isolated F4 Type N-Channel MOSFET 1200 V, 2-Pin AG-EASY2B F445MR12W1M1B76BPSA1
- Infineon Type N-Channel MOSFET 1200 V Enhancement, 8-Pin AG-EASY3B
- Infineon 54 A 1200 V AG-EASY2B-1, Clamp
- Infineon Type N-Channel MOSFET 1200 V Enhancement, 8-Pin AG-EASY3B FF2MR12W3M1HB11BPSA1