Infineon FF6MR N-Channel MOSFET, 150 A, 1.2 kV Enhancement AG-EASY2B FF6MR20W2M1HB70BPSA1
- RS庫存編號:
- 351-916
- 製造零件編號:
- FF6MR20W2M1HB70BPSA1
- 製造商:
- Infineon
小計（1 件）*
HK$6,615.00
訂單超過 HK$250.00 免費送貨
有庫存
- 加上 11 件從 2026年10月19日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 + | HK$6,615.00 |
* 參考價格
- RS庫存編號:
- 351-916
- 製造零件編號:
- FF6MR20W2M1HB70BPSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | AG-EASY2B | |
| Series | FF6MR | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 20mW | |
| Maximum Gate Source Voltage Vgs | 23V | |
| Forward Voltage Vf | 5.35V | |
| Maximum Operating Temperature | 150°C | |
| Length | 62.8mm | |
| Height | 12.255mm | |
| Standards/Approvals | IEC 60068, IEC 60749, IEC 60747 | |
| Width | 48mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type AG-EASY2B | ||
Series FF6MR | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 20mW | ||
Maximum Gate Source Voltage Vgs 23V | ||
Forward Voltage Vf 5.35V | ||
Maximum Operating Temperature 150°C | ||
Length 62.8mm | ||
Height 12.255mm | ||
Standards/Approvals IEC 60068, IEC 60749, IEC 60747 | ||
Width 48mm | ||
Automotive Standard No | ||
The Infineon EasyDUAL 2B CoolSiC MOSFET half-bridge module 2000 V, 6 mΩ with NTC temperature sensor, Press FIT Contact Technology and aluminum nitride ceramic.
Best in Class packages with 12mm height
Leading edge WBG material
Very low module stray inductance
Press FIT pins
Integrated NTC temperature sensor
Wide gate source voltage range
Low switching & conduction losses
相关链接
- Infineon F3L6MR N-Channel MOSFET 2 kV Enhancement AG-EASY2B F3L6MR20W2M1HB70BPSA1
- Infineon Dual FF6MR 1 N-Channel MOSFET 1200 V Enhancement AG-62MM FF6MR12KM1BOSA1
- Infineon IAUZ N-Channel MOSFET 1200 V Enhancement, 8-Pin AG-EASY2B F3L8MR12W2M1HPB11BPSA1
- Infineon MOSFET 1.2 kV AG-EASY1BS-1 FF08MR12W1MA1B11ABPSA1
- Infineon Half Bridge XHP 2 N-Channel MOSFET Modules 1200 V Enhancement, 8-Pin AG-EASY2B FF4MR12W2M1HPB11ABPSA1
- Infineon FF4000 N-Channel MOSFET 3.3 kV Enhancement AG-XHP2K33 FF4000UXTR33T2M1BPSA1
- Infineon FF600R12ME7B11BPSA1 IGBT Module 11-Pin AG-ECONOD, Surface
- Infineon Isolated F4 N-Channel MOSFET 1200 V, 2-Pin AG-EASY2B F445MR12W1M1B76BPSA1