Infineon Dual FF6MR 1 N-Channel MOSFET, 250 A, 1.2 kV Enhancement AG-62MM FF6MR12KM1BOSA1

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小計（1 件）*

HK$4,692.30

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單位
每單位
1 - 9HK$4,692.30
10 - 99HK$4,598.50
100 - 249HK$4,506.40
250 - 499HK$4,416.40
500 +HK$4,328.10

* 參考價格

包裝方式：
RS庫存編號:
222-4796
製造零件編號:
FF6MR12KM1BOSA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

250A

Maximum Drain Source Voltage Vds

1.2kV

Package Type

AG-62MM

Series

FF6MR

Mount Type

Chassis

Maximum Drain Source Resistance Rds

5.81mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

20mW

Forward Voltage Vf

5.85V

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Standards/Approvals

No

Number of Elements per Chip

1

Automotive Standard

No

The Infineon 62 mm 1200 V, 6 mΩ half bridge module with Cool Sic™ MOSFET.

High current density

Low switching losses

Superior gate oxide reliability

Highest robustness against humidity

Robust integrated body diode, and thus optimal thermal conditions

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