Infineon Dual FF6MR 1 N-Channel MOSFET, 250 A, 1.2 kV Enhancement AG-62MM FF6MR12KM1BOSA1
- RS庫存編號:
- 222-4795
- 製造零件編號:
- FF6MR12KM1BOSA1
- 製造商:
- Infineon
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額外添加20件可節省HK$1,862.20
查看批量定價選項小計（1 托盤，共 10 件）*
HK$46,553.60
訂單超過 HK$250.00 免費送貨
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- 加上 20 件從 2026年11月09日 起發貨
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單位 | 每單位 | 每托盤* | 節省 |
|---|---|---|---|
| 10 - 10 | HK$4,655.36 | HK$46,553.60 | - |
| 20 - 20 | HK$4,562.25 | HK$45,622.50 | HK$1,862.20 |
| 30 + | HK$4,471.01 | HK$44,710.10 | HK$5,530.50 |
* 參考價格
- RS庫存編號:
- 222-4795
- 製造零件編號:
- FF6MR12KM1BOSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 250A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Series | FF6MR | |
| Package Type | AG-62MM | |
| Mount Type | Chassis | |
| Maximum Drain Source Resistance Rds | 5.81mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 20mW | |
| Forward Voltage Vf | 5.85V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 250A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Series FF6MR | ||
Package Type AG-62MM | ||
Mount Type Chassis | ||
Maximum Drain Source Resistance Rds 5.81mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 20mW | ||
Forward Voltage Vf 5.85V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals No | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
The Infineon 62 mm 1200 V, 6 mΩ half bridge module with Cool Sic™ MOSFET.
High current density
Low switching losses
Superior gate oxide reliability
Highest robustness against humidity
Robust integrated body diode, and thus optimal thermal conditions
相关链接
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