Infineon Dual FF6MR 1 N-Channel MOSFET, 250 A, 1.2 kV Enhancement AG-62MM FF6MR12KM1BOSA1

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小計(1 托盤,共 10 件)*

HK$46,553.60

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單位
每單位
每托盤*
10 - 10HK$4,655.36HK$46,553.60
20 - 20HK$4,562.25HK$45,622.50
30 +HK$4,471.01HK$44,710.10

* 參考價格

RS庫存編號:
222-4795
製造零件編號:
FF6MR12KM1BOSA1
製造商:
Infineon
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品牌

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

250A

Maximum Drain Source Voltage Vds

1.2kV

Package Type

AG-62MM

Series

FF6MR

Mount Type

Chassis

Maximum Drain Source Resistance Rds

5.81mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

20mW

Forward Voltage Vf

5.85V

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Standards/Approvals

No

Number of Elements per Chip

1

Automotive Standard

No

The Infineon 62 mm 1200 V, 6 mΩ half bridge module with Cool Sic™ MOSFET.

High current density

Low switching losses

Superior gate oxide reliability

Highest robustness against humidity

Robust integrated body diode, and thus optimal thermal conditions

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