Infineon BSP Type N-Channel MOSFET, 0.12 A, 100 V Enhancement, 3-Pin SOT-223 BSP296NH6433XTMA1
- RS庫存編號:
- 250-0534
- 製造零件編號:
- BSP296NH6433XTMA1
- 製造商:
- Infineon
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小計（1 包，共 5 件）*
HK$34.30
訂單超過 HK$250.00 免費送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | HK$6.86 | HK$34.30 |
| 10 - 95 | HK$6.16 | HK$30.80 |
| 100 - 245 | HK$5.54 | HK$27.70 |
| 250 - 495 | HK$5.00 | HK$25.00 |
| 500 + | HK$4.50 | HK$22.50 |
* 參考價格
- RS庫存編號:
- 250-0534
- 製造零件編號:
- BSP296NH6433XTMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 0.12A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | BSP | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 0.12A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series BSP | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon makes OptiMOS Small-Signal-Transistor is a N-channel, Enhancement mode and Logic level is 4.5V rated. It is Avalanche rated, 100% lead-free and Halogen-free.
Avalanche rated and 100% lead-free
Vds is 100 V and Id is 1.2 A
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