Vishay SI3437DV Type P-Channel MOSFET, -1.4 A, -150 V, 6-Pin TSOP-6 SI3437DV-T1-GE3
- RS庫存編號:
- 256-7351
- 製造零件編號:
- SI3437DV-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 5 件）*
HK$55.10
訂單超過 HK$250.00 免費送貨
有庫存
- 加上 2,850 件從 2026年8月17日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | HK$11.02 | HK$55.10 |
| 50 - 95 | HK$10.48 | HK$52.40 |
| 100 - 245 | HK$9.80 | HK$49.00 |
| 250 - 995 | HK$9.14 | HK$45.70 |
| 1000 + | HK$8.38 | HK$41.90 |
* 參考價格
- RS庫存編號:
- 256-7351
- 製造零件編號:
- SI3437DV-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -1.4A | |
| Maximum Drain Source Voltage Vds | -150V | |
| Package Type | TSOP-6 | |
| Series | SI3437DV | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.79Ω | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Maximum Power Dissipation Pd | 3.2W | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -1.4A | ||
Maximum Drain Source Voltage Vds -150V | ||
Package Type TSOP-6 | ||
Series SI3437DV | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.79Ω | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Maximum Power Dissipation Pd 3.2W | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 1.1mm | ||
Automotive Standard No | ||
Vishay SI3437DV Series MOSFET, 3.2W Maximum Power Dissipation, 150V Maximum Drain Source Voltage - SI3437DV-T1-GE3
This p-channel MOSFET is a surface-mount transistor designed for high-voltage switching and control in compact electronic assemblies. It operates across a broad thermal span, making it suitable for environments with large temperature swings, and is intended for circuit designs that require a controlled gate charge and moderate continuous current handling in a low-profile package.
Features and Benefits:
• 150V drain capability enables high-voltage switching applications
• 0.79Ω on-resistance reduces conduction losses during operation
• 1.4A continuous drain current supports modest load currents
• 8nC typical gate charge allows predictable switching behaviour
• 3.2W power dissipation handles moderate thermal loading
• RoHS compliance meets environmental material restrictions
• 0.79Ω on-resistance reduces conduction losses during operation
• 1.4A continuous drain current supports modest load currents
• 8nC typical gate charge allows predictable switching behaviour
• 3.2W power dissipation handles moderate thermal loading
• RoHS compliance meets environmental material restrictions
Applications
• Suitable for high-voltage load switching in power supplies
• Ideal for battery protection and reverse-polarity circuits
• Used with compact converters requiring surface-mount components
• Can be used for signal-level switching in industrial controls
• Appropriate for consumer electronics with thermal variation demands
• Ideal for battery protection and reverse-polarity circuits
• Used with compact converters requiring surface-mount components
• Can be used for signal-level switching in industrial controls
• Appropriate for consumer electronics with thermal variation demands
What mounting considerations are there for compact boards?
It is supplied in a TSOP-6 surface-mount package, so pad layout should follow TSOP-6 footprint recommendations and allow adequate copper for heat spreading.
How does gate drive affect switching performance?
Gate drive magnitude and slew rate will influence switching losses because the device exhibits an 8nC typical gate charge
driver selection should match desired rise/fall times.
What thermal range can it tolerate during operation?
The device is specified to function from -55°C up to +150°C, which accommodates applications with substantial ambient and junction temperature variation.
Are there limitations for automotive integration?
The part is not designated to automotive standards, so it should not be chosen where certified automotive-grade components are required.
相关链接
- Vishay SI3437DV Type P-Channel MOSFET -150 V, 6-Pin TSOP-6 SI3437DV-T1-GE3
- Vishay Type P-Channel MOSFET 20 V, 6-Pin TSOP-6 SI3443DDV-T1-GE3
- Vishay Type P-Channel MOSFET 20 V, 6-Pin TSOP-6 SI3460DDV-T1-GE3
- Vishay Type P-Channel MOSFET 40 V, 6-Pin TSOP-6 SI3438DV-T1-GE3
- Vishay Si3433CDV Type P-Channel MOSFET 20 V Enhancement, 6-Pin TSOP SI3433CDV-T1-GE3
- Vishay SI3483DDV Type P-Channel MOSFET -30 V, 6-Pin TSOP-6 SI3483DDV-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 80 V Enhancement, 6-Pin TSOP Si3129DV-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 20 V Enhancement, 6-Pin TSOP SI3493DDV-T1-GE3