Infineon HEXFET N-Channel MOSFET, 124 A, 100 V Enhancement DirectFET IRF7769L1TRPBF

This MOSFET is a through‑hole N‑channel enhancement device designed for high‑current switching in demanding electrical systems. It operates across a wide temperature range suitable for industrial conditions and meets RoHS environmental restrictions. The component is supplied in a DirectFET package intended for applications requiring efficient thermal management and Compact board integration.

• 3.50mΩ RDS(on) reduces conduction losses for higher efficiency
• 100V VDS enables operation in medium‑voltage topologies
• 124A continuous drain current supports high‑power delivery
• VF 1.3V forward voltage assists accurate gate‑to‑source control
• -55°C to +175°C temperature range ensures extended thermal tolerance

• Suitable for power supply and motor control systems
• Used with high‑current DC power distribution racks
• Ideal for industrial converter and inverter stages
• Can be used for battery management and charge regulation

It uses a DirectFET package to facilitate low thermal resistance and efficient heat transfer.

The device is designed for through‑hole mounting to provide robust mechanical and thermal connection.

It is not specified as an automotive‑standard part and therefore should be evaluated against vehicle‑specific requirements.

The part is an N‑channel device operating in enhancement mode, suitable for common high‑side or low‑side switches.

It is RoHS‑compliant, indicating restriction of certain hazardous substances.