Infineon HEXFET N-Channel MOSFET, 10 A, 80 V Enhancement, 8-Pin SO-8 IRF7854TRPBF
- RS庫存編號:
- 257-9322
- 製造零件編號:
- IRF7854TRPBF
- 製造商:
- Infineon
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HK$96.90
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|---|---|---|
| 5 - 45 | HK$19.38 | HK$96.90 |
| 50 - 95 | HK$18.44 | HK$92.20 |
| 100 - 495 | HK$17.32 | HK$86.60 |
| 500 - 1995 | HK$16.14 | HK$80.70 |
| 2000 + | HK$14.80 | HK$74.00 |
* 參考價格
- RS庫存編號:
- 257-9322
- 製造零件編號:
- IRF7854TRPBF
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.5W | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.5W | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 80V Drain‑Source Voltage, 10A Continuous Drain Current - IRF7854TRPBF
This MOSFET is an N‑channel enhancement device supplied in a surface‑mount SO‑8 package for Compact power switching. It operates across a wide temperature span and is designed for applications requiring moderate power dissipation and low conduction losses. The device conforms to RoHS requirements and is intended for use where efficient switching and thermal endurance are needed.
Features and Benefits:
• 13.4mΩ RDS(on) reduces conduction losses
• 80V VDS enables higher‑voltage switching
• 10A continuous drain current supports sustained loads
• 27nC typical gate charge improves switching control
• 2.5W power dissipation manages thermal stress
• 80V VDS enables higher‑voltage switching
• 10A continuous drain current supports sustained loads
• 27nC typical gate charge improves switching control
• 2.5W power dissipation manages thermal stress
Applications
• Suitable for DC motor drive stages
• Ideal for power management in industrial controls
• Used with switching regulators and converters
• Can be used for load switching in telecom equipment
• Suitable for Compact surface‑mounted power modules
• Ideal for power management in industrial controls
• Used with switching regulators and converters
• Can be used for load switching in telecom equipment
• Suitable for Compact surface‑mounted power modules
What gate voltage limits apply during operation?
The device accepts a gate‑to‑source voltage up to 20V.
What thermal range can it tolerate in demanding environments?
It is specified to operate from -55°C up to 150°C.
How does forward voltage affect conduction under body‑diode conditions?
The forward diode exhibits approximately 1.3V during conduction events.
How many pins and what mounting type are used for PCB implementation?
It comes in an 8‑pin SO‑8 package configured for surface mounting.
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