Infineon HEXFET N-Channel MOSFET, 120 A, 40 V Enhancement TO-220 IRFB7440PBF
- RS庫存編號:
- 257-9359
- 製造零件編號:
- IRFB7440PBF
- 製造商:
- Infineon
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HK$447.10
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單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | HK$8.942 | HK$447.10 |
| 100 - 450 | HK$8.494 | HK$424.70 |
| 500 + | HK$8.24 | HK$412.00 |
* 參考價格
- RS庫存編號:
- 257-9359
- 製造零件編號:
- IRFB7440PBF
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 2.50mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 2.50mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 40V Maximum Drain-Source Voltage, 120A Maximum Continuous Drain Current - IRFB7440PBF
This MOSFET is a through‑hole N‑channel switching device designed for high‑current power applications. It operates over a wide temperature range and conforms to RoHS environmental restrictions. The package facilitates mounting on heatsinking surfaces for power dissipation management and discrete assembly in conventional circuits.
Features and Benefits:
• 2.50mΩ low Rds(on) for reduced conduction losses
• 40V drain-source limit enabling mid‑voltage systems
• 120A continuous current handling for sustained loads
• Enhancement‑channel operation for straightforward gate drive
• 1.3V forward voltage supporting efficient body‑diode conduction
• 40V drain-source limit enabling mid‑voltage systems
• 120A continuous current handling for sustained loads
• Enhancement‑channel operation for straightforward gate drive
• 1.3V forward voltage supporting efficient body‑diode conduction
Applications
• Suitable for high‑current MOSFET use in power supplies
• Ideal for MOSFETs in motor drivers (40V, 120A)
• Used with TO‑220 through‑hole N‑channel MOSFET 40V layouts
• Can be used as a HEXFET 2.5mΩ low Rds(on) MOSFET replacement
• Employed in circuits requiring high‑temperature MOSFET operation (-55°C to 175°C)
• Ideal for MOSFETs in motor drivers (40V, 120A)
• Used with TO‑220 through‑hole N‑channel MOSFET 40V layouts
• Can be used as a HEXFET 2.5mΩ low Rds(on) MOSFET replacement
• Employed in circuits requiring high‑temperature MOSFET operation (-55°C to 175°C)
What temperature range can it reliably operate within?
It operates across -55°C to 175°C, covering low‑temperature starts and high‑temperature operation.
What mounting method is required for thermal management?
It is supplied in a TO‑220 through‑hole package intended for attachment to external heatsinks or chassis.
What type of channel and switching mode does it use?
The device is an N‑channel enhancement‑mode transistor that requires a gate‑source drive to conduct.
Is it suitable for automotive‑qualified installations?
It is not specified as meeting automotive standards and should be evaluated against vehicle‑specific requirements.
Does it meet environmental directive requirements?
It is RoHS‑compliant, indicating restriction of certain hazardous substances.
相关链接
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