Infineon iPB Type N-Channel MOSFET, 44 A, 300 V P TO-263 IPB407N30NATMA1
- RS庫存編號:
- 258-3807
- 製造零件編號:
- IPB407N30NATMA1
- 製造商:
- Infineon
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HK$70.00
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2026年10月12日 發貨
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單位 | 每單位 |
|---|---|
| 1 - 9 | HK$70.00 |
| 10 - 99 | HK$62.00 |
| 100 - 249 | HK$52.30 |
| 250 - 499 | HK$51.30 |
| 500 + | HK$45.50 |
* 參考價格
- RS庫存編號:
- 258-3807
- 製造零件編號:
- IPB407N30NATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 44A | |
| Maximum Drain Source Voltage Vds | 300V | |
| Series | iPB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 40.7mΩ | |
| Channel Mode | P | |
| Forward Voltage Vf | 1.2V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 44A | ||
Maximum Drain Source Voltage Vds 300V | ||
Series iPB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 40.7mΩ | ||
Channel Mode P | ||
Forward Voltage Vf 1.2V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS 300V MOSFETs, incorporating fast diode technology, are especially optimized for body diode hard commutation. The devices not only demonstrate impressive on-state resistance and figure of merit, but also provide high system reliability through the lowest reverse recovery charge available on the market. With the 300V OptiMOS series, Infineon brings a new level of performance in hard switching applications such as telecom, uninterruptible power supplies, industrial power supplies, DC-AC inverters and motor control.
Hard commutation ruggedness
Optimized hard switching behaviour
Board space and system cost reduction
High system reliability
Best switching performance
相关链接
- Infineon iPB Type N-Channel MOSFET 300 V P TO-263
- Infineon iPB Type P-Channel MOSFET 800 V Enhancement TO-263
- Infineon iPB Type P-Channel MOSFET 40 V Enhancement TO-263
- Infineon iPB Type P-Channel MOSFET 40 V Enhancement TO-263
- Infineon iPB Type P-Channel MOSFET 40 V Enhancement TO-263
- Infineon iPB Type N-Channel MOSFET 100 V P TO-263
- Infineon iPB Type N-Channel MOSFET 100 V P TO-263
- Infineon iPB Type N-Channel MOSFET 80 V P TO-263