Infineon iPB Type P-Channel MOSFET, -120 A, -40 V Enhancement TO-263 IPB120P04P404ATMA2
- RS庫存編號:
- 258-3798
- 製造零件編號:
- IPB120P04P404ATMA2
- 製造商:
- Infineon
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HK$30.70
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| 1 - 9 | HK$30.70 |
| 10 - 99 | HK$29.20 |
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| 250 - 499 | HK$25.50 |
| 500 + | HK$23.50 |
* 參考價格
- RS庫存編號:
- 258-3798
- 製造零件編號:
- IPB120P04P404ATMA2
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -120A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Package Type | TO-263 | |
| Series | iPB | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 3.50mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -120A | ||
Maximum Drain Source Voltage Vds -40V | ||
Package Type TO-263 | ||
Series iPB | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 3.50mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon iPB Series MOSFET, 40V Maximum Drain‑Source Voltage, 120A Maximum Continuous Drain Current - IPB120P04P404ATMA2
This P‑channel MOSFET is a surface‑mount power transistor designed for high‑current switching in demanding electronic systems. It operates across a broad temperature range and is suitable for applications requiring low conduction losses and Compact thermal management. The device conforms to industry environmental restrictions and meets automotive quality standards, making it appropriate for rugged vehicle electronics and power‑regulation modules.
Features and Benefits:
• Low on‑resistance reduces conduction losses during high‑current operation
• High continuous drain current supports heavy‑load switching
• Wide temperature capability preserves operation in extreme environments
• Low forward voltage minimises voltage drop in power paths
• Surface‑mount package aids compact, thermally efficient PCB layouts
• High continuous drain current supports heavy‑load switching
• Wide temperature capability preserves operation in extreme environments
• Low forward voltage minimises voltage drop in power paths
• Surface‑mount package aids compact, thermally efficient PCB layouts
Applications
• Suitable for automotive DC‑DC converter power stages
• Ideal for high‑current power management in vehicle systems
• Used with battery protection and distribution modules
• Can be used for load‑switching in high‑current assemblies
• Ideal for high‑current power management in vehicle systems
• Used with battery protection and distribution modules
• Can be used for load‑switching in high‑current assemblies
What package type does the device use?
It is supplied in a TO‑263 package for surface mounting.
What environmental approvals apply to this component?
The component is RoHS‑compliant and conforms to automotive AEC‑Q101 standards.
What is the device's channel configuration and mode?
It is a P‑channel enhancement‑mode device.
What electrical limits should designers respect for safe operation?
The maximum drain‑source voltage is 40V and the maximum continuous drain current is 120A.
What thermal range can be expected during operation?
The allowable operating temperature ranges from -55°C to +175°C.
相关链接
- Infineon iPB Type P-Channel MOSFET -40 V Enhancement TO-263 IPB120P04P404ATMA2
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