製造零件編號

Infineon iPB N-Channel MOSFET, 100 A, 120 V Enhancement TO-263

Name: Infineon iPB N-Channel MOSFET, 100 A, 120 V Enhancement TO-263
Brand: Infineon
SKU: 258-3795
Availability: BackOrder

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

查看批量定價選項

小計（1000 件, 每卷1000個）*

HK$21,677.00

暫時缺貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

* 參考價格

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	100A
	Maximum Drain Source Voltage Vds	120V
	Package Type	TO-263
	Series	iPB
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	4.8mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	300W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	139nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	選取全部
	品牌 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 100A
	Maximum Drain Source Voltage Vds 120V
	Package Type TO-263
	Series iPB
	Mount Type Surface
	Maximum Drain Source Resistance Rds 4.8mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 300W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 139nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

The Infineon OptiMOS-T power-transistor is N-channel normal level enhancement mode. It has 175°C operating temperature.

AEC qualified

MSL1 up to 260°C peak reflow

第一時間了解我們的最新產品和優惠

電郵

您在訂閱此郵件時提供的個人信息將根據《隱私政策》進行處理。