Infineon iPB Type P-Channel MOSFET, -120 A, -40 V Enhancement TO-263 IPB120P04P404ATMA2
- RS庫存編號:
- 258-3797
- 製造零件編號:
- IPB120P04P404ATMA2
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計(1 卷,共 1000 件)*
HK$11,645.00
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 2,000 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 - 1000 | HK$11.645 | HK$11,645.00 |
| 2000 - 2000 | HK$11.412 | HK$11,412.00 |
| 3000 + | HK$11.184 | HK$11,184.00 |
* 參考價格
- RS庫存編號:
- 258-3797
- 製造零件編號:
- IPB120P04P404ATMA2
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -120A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Series | iPB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 3.50mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -120A | ||
Maximum Drain Source Voltage Vds -40V | ||
Series iPB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 3.50mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon iPB Series MOSFET, 40V Maximum Drain‑Source Voltage, 120A Maximum Continuous Drain Current - IPB120P04P404ATMA2
This P‑channel MOSFET is a surface‑mount power transistor designed for high‑current switching in demanding electronic systems. It operates across a broad temperature range and is suitable for applications requiring low conduction losses and Compact thermal management. The device conforms to industry environmental restrictions and meets automotive quality standards, making it appropriate for rugged vehicle electronics and power‑regulation modules.
Features and Benefits:
• Low on‑resistance reduces conduction losses during high‑current operation
• High continuous drain current supports heavy‑load switching
• Wide temperature capability preserves operation in extreme environments
• Low forward voltage minimises voltage drop in power paths
• Surface‑mount package aids compact, thermally efficient PCB layouts
• High continuous drain current supports heavy‑load switching
• Wide temperature capability preserves operation in extreme environments
• Low forward voltage minimises voltage drop in power paths
• Surface‑mount package aids compact, thermally efficient PCB layouts
Applications
• Suitable for automotive DC‑DC converter power stages
• Ideal for high‑current power management in vehicle systems
• Used with battery protection and distribution modules
• Can be used for load‑switching in high‑current assemblies
• Ideal for high‑current power management in vehicle systems
• Used with battery protection and distribution modules
• Can be used for load‑switching in high‑current assemblies
What package type does the device use?
It is supplied in a TO‑263 package for surface mounting.
What environmental approvals apply to this component?
The component is RoHS‑compliant and conforms to automotive AEC‑Q101 standards.
What is the device's channel configuration and mode?
It is a P‑channel enhancement‑mode device.
What electrical limits should designers respect for safe operation?
The maximum drain‑source voltage is 40V and the maximum continuous drain current is 120A.
What thermal range can be expected during operation?
The allowable operating temperature ranges from -55°C to +175°C.
相关链接
- Infineon iPB Type P-Channel MOSFET -40 V Enhancement TO-263 IPB120P04P404ATMA2
- Infineon iPB Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-263 IPB120P04P4L03ATMA2
- Infineon iPB N-Channel MOSFET, 120 A Enhancement TO-263 IPB120N06S403ATMA2
- Infineon iPB N-Channel MOSFET 40 V Enhancement TO-263 IPB120N04S402ATMA1
- Infineon iPB N-Channel MOSFET 120 V Enhancement TO-263 IPB100N12S305ATMA1
- Infineon iPB Type P-Channel MOSFET 40 V Enhancement TO-263
- Infineon iPB Type P-Channel MOSFET 40 V Enhancement TO-263 IPB180P04P403ATMA2
- Infineon iPB Type P-Channel MOSFET 40 V Enhancement TO-263 IPB80P04P405ATMA2
