Infineon iPB Type P-Channel MOSFET, 80 A, 40 V Enhancement TO-263
- RS庫存編號:
- 258-3814
- 製造零件編號:
- IPB80P04P407ATMA2
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 卷，共 1000 件）*
HK$10,566.00
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單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 - 1000 | HK$10.566 | HK$10,566.00 |
| 2000 - 2000 | HK$10.355 | HK$10,355.00 |
| 3000 + | HK$10.044 | HK$10,044.00 |
* 參考價格
- RS庫存編號:
- 258-3814
- 製造零件編號:
- IPB80P04P407ATMA2
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | iPB | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 40.7mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series iPB | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 40.7mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-P2 power-transistor is P-channel normal level enhancement mode. It has 175°C operating temperature.
Green package (RoHS compliant)
100% Avalanche tested
相关链接
- Infineon iPB Type P-Channel MOSFET 40 V Enhancement TO-263 IPB80P04P407ATMA2
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