Infineon IPD Type P-Channel MOSFET, -50 A, -40 V Enhancement, 3-Pin TO-252 IPD50P04P4L11ATMA2

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包裝方式:
RS庫存編號:
258-3845
製造零件編號:
IPD50P04P4L11ATMA2
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-50A

Maximum Drain Source Voltage Vds

-40V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

10.6mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

5V

Typical Gate Charge Qg @ Vgs

45nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

58W

Forward Voltage Vf

-1V

Maximum Operating Temperature

175°C

Standards/Approvals

DIN IEC 68-1, RoHS

Automotive Standard

AEC-Q101

Infineon IPD Series MOSFET, 40V Drain-Source Voltage, 58W Power Dissipation - IPD50P04P4L11ATMA2


This MOSFET is a P-channel power transistor intended for high-current switching in surface-mounted assemblies. It operates across a wide ambient range and is designed for demanding temperature environments, making it suitable for applications where thermal endurance and Compact packaging matter.

Features and Benefits:


• Low Rds(on) 10.6mΩ reduces conduction losses
• Continuous drain current -50A supports high-current loads
• Gate charge 45nC allows predictable switching energy
• Maximum Vgs 5V ensures safe gate drive limits
• TO-252 surface mount enables Compact board layouts

Applications


• Suitable for automotive power distribution modules
• Ideal for high-current polarity switching circuits
• Used with thermal management for extended-temperature systems
• Can be used for DC power control in vehicle electronics

What temperature extremes can it withstand?


It is rated to operate from -55°C up to 175°C.

What packaging and mount type does it use?


It is supplied in a TO-252 package intended for surface mounting.

How does the device perform under high-power conditions?


It allows up to 58W dissipation, enabling sustained power handling with appropriate thermal management.

Are there limits for the drain-source voltage and gate drive?


The device specifies a maximum drain-source voltage of -40V and a maximum gate-source of 5V.

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