Infineon MOSFET, 50 A, 2 kV AG-EASY3B DF419MR20W3M1HFB11BPSA1
- RS庫存編號:
- 260-1093
- 製造零件編號:
- DF419MR20W3M1HFB11BPSA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 件）*
HK$2,141.70
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單位 | 每單位 |
|---|---|
| 1 - 1 | HK$2,141.70 |
| 2 - 2 | HK$2,098.70 |
| 3 - 3 | HK$2,056.80 |
| 4 + | HK$2,015.70 |
* 參考價格
- RS庫存編號:
- 260-1093
- 製造零件編號:
- DF419MR20W3M1HFB11BPSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 2kV | |
| Package Type | AG-EASY3B | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 26.5mΩ | |
| Forward Voltage Vf | 6.15V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 2kV | ||
Package Type AG-EASY3B | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 26.5mΩ | ||
Forward Voltage Vf 6.15V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon MOSFET features a 4-leg boost configuration in one Easy 3B housing and comes with the latest CoolSiC M1H generation. The 2000 V SiC MOSFET shares the same performance and benefits as the 1200 V M1H series incl. 12% lower RDS(on) at 125° C, wider gate source voltage area for higher flexibility, a maximum junction temperature of 175° C and smaller chip sizes.
High current density
Low inductive design
Rugged mounting due to integrated mounting clamps
相关链接
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