Infineon IPD N-Channel MOSFET, 30 A, 55 V N PG-TO-252 IPD30N06S2L23ATMA3
- RS庫存編號:
- 260-5129
- 製造零件編號:
- IPD30N06S2L23ATMA3
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 5 件）*
HK$67.20
訂單超過 HK$250.00 免費送貨
有庫存
- 1,475 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | HK$13.44 | HK$67.20 |
| 50 - 95 | HK$12.90 | HK$64.50 |
| 100 - 245 | HK$12.52 | HK$62.60 |
| 250 + | HK$12.28 | HK$61.40 |
* 參考價格
- RS庫存編號:
- 260-5129
- 製造零件編號:
- IPD30N06S2L23ATMA3
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | IPD | |
| Package Type | PG-TO-252 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series IPD | ||
Package Type PG-TO-252 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon IPD Series MOSFET, 55V Maximum Drain-Source Voltage, 30A Maximum Continuous Drain Current - IPD30N06S2L23ATMA3
This MOSFET is a surface-mount N-channel power transistor designed for high-current switching and power-management roles. It operates across a wide ambient span suitable for industrial thermal environments and is offered in a Compact TO-252 style package for board-level assembly. The device meets restricted-substance standards for electronic components.
Features and Benefits:
• 23mΩ Rds(on) reduces conduction losses during high-current operation
• 30A continuous drain current supports demanding power delivery
• 55V drain-source rating enables use in medium-voltage systems
• Surface-mount TO-252 package permits Compact PCB layouts
• -55°C to 175°C operating range maintains functionality across extremes
• 30A continuous drain current supports demanding power delivery
• 55V drain-source rating enables use in medium-voltage systems
• Surface-mount TO-252 package permits Compact PCB layouts
• -55°C to 175°C operating range maintains functionality across extremes
Applications
• Suitable for DC power distribution and load switching
• Ideal for motor-driver stages in Compact converters
• Used for thermal-tolerant industrial control electronics
• Can be used for power management in telecom equipment
• Suitable for high-current switch stage in power supplies
• Ideal for motor-driver stages in Compact converters
• Used for thermal-tolerant industrial control electronics
• Can be used for power management in telecom equipment
• Suitable for high-current switch stage in power supplies
What mounting method does it require?
It is intended for surface-mount assembly using a PG-TO-252 footprint.
Which channel polarity does it employ?
It uses an N-channel conduction mode for switching control.
Is it approved for restricted-substance compliance?
It has RoHS approval for use in applications requiring restricted-substance adherence.
What is the maximum continuous current it can handle?
It is rated for a continuous drain current of 30A.
相关链接
- Infineon IPD N-Channel MOSFET 55 V N PG-TO-252 IPD30N06S2L23ATMA3
- Infineon IPD N-Channel MOSFET 120 V Enhancement, 3-Pin PG-TO-252 IPD35N12S3L24ATMA1
- Infineon IPD N-Channel MOSFET, 9.9 A N TO-252 IPD60R650CEAUMA1
- Infineon IPD N-Channel MOSFET, 18.1 A N TO-252 IPD50R280CEAUMA1
- Infineon IPD N-Channel MOSFET, 3.7 A N TO-252 IPD60R2K1CEAUMA1
- Infineon IPD N-Channel MOSFET, 75 A N TO-252 IPD110N12N3GATMA1
- Infineon IPD N-Channel MOSFET, 90 A N TO-252 IPD036N04LGATMA1
- Infineon IPD N-Channel MOSFET & Diode, 1.5 A N TO-252 IPD80R4K5P7ATMA1