Infineon IPB057N06N N-Channel MOSFET, 45 A, 60 V Enhancement, 3-Pin PG-TO263-3 IPB057N06NATMA1

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小計(1 包,共 5 件)*

HK$93.80

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每單位
每包*
5 - 45HK$18.76HK$93.80
50 - 95HK$17.44HK$87.20
100 - 245HK$15.28HK$76.40
250 - 495HK$14.82HK$74.10
500 +HK$13.06HK$65.30

* 參考價格

RS庫存編號:
273-2998
製造零件編號:
IPB057N06NATMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

60V

Package Type

PG-TO263-3

Series

IPB057N06N

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

5.7mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

83W

Typical Gate Charge Qg @ Vgs

27nC

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1V

Minimum Operating Temperature

-5°C

Maximum Operating Temperature

175°C

Length

40mm

Standards/Approvals

JEDEC 1, IEC61249-2-21

Width

40mm

Height

1.5mm

Automotive Standard

No

The Infineon power MOSFET is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial appl

Highest system efficiency

Less paralleling required

Increased power density

System cost reduction

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