Vishay SIHP N-Channel MOSFET, 21 A, 600 V Enhancement, 3-Pin TO-220AB SIHP155N60EF-GE3
- RS庫存編號:
- 279-9927
- 製造零件編號:
- SIHP155N60EF-GE3
- 製造商:
- Vishay
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HK$78.90
訂單超過 HK$250.00 免費送貨
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- 加上 946 件從 2026年10月12日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | HK$39.45 | HK$78.90 |
| 10 - 28 | HK$38.60 | HK$77.20 |
| 30 - 98 | HK$37.75 | HK$75.50 |
| 100 + | HK$37.05 | HK$74.10 |
* 參考價格
- RS庫存編號:
- 279-9927
- 製造零件編號:
- SIHP155N60EF-GE3
- 製造商:
- Vishay
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SIHP | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.157Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 179W | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SIHP | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.157Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 179W | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay SIHP Series MOSFET, 600V Maximum Drain Source Voltage, 21A Maximum Continuous Drain Current - SIHP155N60EF-GE3
This MOSFET is a through-hole N-channel transistor designed for high-voltage switching and power applications. It operates across an extended temperature range and is supplied in a TO-220AB package suitable for conventional heatsinking and panel mounting. The device is intended for engineers requiring a robust semiconductor for discrete power stages and switching topologies where a combination of voltage capability and thermal endurance is needed.
Features and Benefits:
• 600V drain rating enables high-voltage switching applications
• 21A continuous drain current supports substantial load currents
• 0.157 Ω low Rds(on) reduces conduction losses under load
• 179W power dissipation allows higher thermal loading
• 38 nC typical gate charge for manageable switching energy
• 30V gate tolerance supports wide gate-drive voltages
• 21A continuous drain current supports substantial load currents
• 0.157 Ω low Rds(on) reduces conduction losses under load
• 179W power dissipation allows higher thermal loading
• 38 nC typical gate charge for manageable switching energy
• 30V gate tolerance supports wide gate-drive voltages
Applications
• Suitable for mains and high-voltage inverter switches
• Used with power supplies requiring robust thermal margin
• Ideal for industrial motor drive stages
• Can be used for DC-DC converters with high-voltage rails
• Used for general-purpose switching in power electronics
• Used with power supplies requiring robust thermal margin
• Ideal for industrial motor drive stages
• Can be used for DC-DC converters with high-voltage rails
• Used for general-purpose switching in power electronics
What ambient temperatures can the device withstand in operation?
It is specified to operate between -55 °C and 150 °C, enabling use in harsh thermal environments.
How is the package useful for thermal management?
The TO-220AB format provides a metal tab for direct attachment to heatsinks, improving heat transfer for high dissipation.
What gate-drive constraints should be observed?
The maximum gate-to-source voltage is 30V, so gate drivers should be limited to this value to avoid overstress.
Is the device compliant with common material restrictions?
It meets RoHS requirements, restricting certain hazardous substances in its construction.
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