Vishay E Type N-Channel Power MOSFET, 51 A, 600 V Enhancement, 8-Pin 8x8LR SIHR080N60E-T1-GE3

RS庫存編號:: 279-9928
製造零件編號:: SIHR080N60E-T1-GE3
製造商:: Vishay

Vishay E Type N-Channel Power MOSFET, 51 A, 600 V Enhancement, 8-Pin 8x8LR SIHR080N60E-T1-GE3

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小計（1 卷，共 3000 件）*

HK$84,588.00

訂單超過 HK$250.00 免費送貨

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從 2027年2月04日發貨

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單位	每單位	每卷*
3000 +	HK$28.196	HK$84,588.00

* 參考價格

RS庫存編號:: 279-9928
製造零件編號:: SIHR080N60E-T1-GE3
製造商:: Vishay

規格

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	51A
	Maximum Drain Source Voltage Vds	600V
	Series	E
	Package Type	8x8LR
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.084Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	500W
	Typical Gate Charge Qg @ Vgs	63nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	8mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 51A
	Maximum Drain Source Voltage Vds 600V
	Series E
	Package Type 8x8LR
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.084Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 500W
	Typical Gate Charge Qg @ Vgs 63nC
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 8mm
	Automotive Standard No

Datasheet - SIHR080N60E-T1-GE3

Vishay Series E Power MOSFET, 600V Maximum Drain Source Voltage, 51A Maximum Continuous Drain Current - SIHR080N60E-T1-GE3

This power MOSFET is a high-voltage, N‑channel enhancement device designed for demanding power conversion and switching roles in surface‑mount applications. It offers a combination of high blocking voltage, substantial continuous current capability and a gate voltage rating suitable for common drive circuits, making it appropriate for systems that need compact, high‑power switching in constrained layouts.

Features and Benefits:

• 600V blocking capability enables high‑voltage system use
• 51A continuous current supports heavy load handling
• 0.084Ω Rds(on) reduces conduction losses during operation
• 500W power dissipation allows sustained high‑power handling
• 63nC typical gate charge enables predictable switching behaviour
• 30V gate rating protects against excessive gate drive voltages

Applications

• Suitable for high‑voltage switch‑mode power supplies
• Ideal for industrial motor drive front‑ends
• Used with renewable energy inverter stages
• Can be used for power‑factor correction circuits
• Appropriate for medium‑power welding and induction heating

What temperature range can it tolerate in harsh environments?

It operates across -55°C to 150°C, permitting use in wide thermal conditions without derating for moderate‑temperature excursions.

How does the package support compact PCB designs?

The 8‑pin surface‑mount 8x8LR footprint enables dense board placement while providing adequate thermal and electrical connectivity.

What is the forward voltage during conduction and its impact?

Typical forward voltage is 1.2V, which influences on‑state voltage drop and must be considered in thermal and efficiency calculations.

Is this device suitable for automotive specification requirements?

It is not specified as automotive‑grade, so it should not be assumed compliant with automotive‑specific standards for vehicle electronics.