Vishay Single 1 N-Channel MOSFET, 8.5 A, 650 V Enhancement, 3-Pin TO-220AB IRFB9N65APBF
- RS庫存編號:
- 541-1938
- 製造零件編號:
- IRFB9N65APBF
- 製造商:
- Vishay
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- RS庫存編號:
- 541-1938
- 製造零件編號:
- IRFB9N65APBF
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.5A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 930mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -30V, +30V | |
| Maximum Power Dissipation Pd | 167W | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | +150°C | |
| Number of Elements per Chip | 1 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.5A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 930mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -30V, +30V | ||
Maximum Power Dissipation Pd 167W | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Single | ||
Maximum Operating Temperature +150°C | ||
Number of Elements per Chip 1 | ||
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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