Vishay Si4164DY N-Channel TrenchFET Power MOSFET, 30 A, 30 V Enhancement, 8-Pin SOIC SI4164DY-T1-GE3
- RS庫存編號:
- 812-3198
- 製造零件編號:
- SI4164DY-T1-GE3
- 製造商:
- Vishay
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可享批量折扣
查看批量定價選項小計（1 包，共 10 件）*
HK$116.10
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年6月07日 發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 620 | HK$11.61 | HK$116.10 |
| 630 - 1240 | HK$11.32 | HK$113.20 |
| 1250 + | HK$11.14 | HK$111.40 |
* 參考價格
- RS庫存編號:
- 812-3198
- 製造零件編號:
- SI4164DY-T1-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | TrenchFET Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | Si4164DY | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0032Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 0.72V | |
| Maximum Power Dissipation Pd | 6W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 26.5nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 4mm | |
| Height | 1.55mm | |
| Standards/Approvals | JEDEC JS709A, RoHS | |
| Length | 5mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type TrenchFET Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series Si4164DY | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0032Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 0.72V | ||
Maximum Power Dissipation Pd 6W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 26.5nC | ||
Maximum Operating Temperature 150°C | ||
Width 4mm | ||
Height 1.55mm | ||
Standards/Approvals JEDEC JS709A, RoHS | ||
Length 5mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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