Vishay Si9407BDY Type P-Channel TrenchFET Power MOSFET, 4.7 A, 60 V Enhancement, 8-Pin SOIC SI9407BDY-T1-GE3
- RS庫存編號:
- 818-1444
- 製造零件編號:
- SI9407BDY-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 20 件）*
HK$175.40
訂單超過 HK$250.00 免費送貨
最後的 RS 庫存
- 最終 1,200 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 620 | HK$8.77 | HK$175.40 |
| 640 - 1240 | HK$8.545 | HK$170.90 |
| 1260 + | HK$8.41 | HK$168.20 |
* 參考價格
- RS庫存編號:
- 818-1444
- 製造零件編號:
- SI9407BDY-T1-GE3
- 製造商:
- Vishay
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | TrenchFET Power MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 4.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOIC | |
| Series | Si9407BDY | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.12Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -0.8V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Maximum Power Dissipation Pd | 5W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2002/95/EC | |
| Height | 1.55mm | |
| Length | 5mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type TrenchFET Power MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 4.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOIC | ||
Series Si9407BDY | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.12Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -0.8V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Maximum Power Dissipation Pd 5W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC | ||
Height 1.55mm | ||
Length 5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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