ROHM Single 1 N-Channel MOSFET, 20 A, 600 V Enhancement, 3-Pin TO-220FM R6020ENX
- RS庫存編號:
- 826-7541
- 製造零件編號:
- R6020ENX
- 製造商:
- ROHM
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 2 件）*
HK$74.50
訂單超過 HK$250.00 免費送貨
最後的 RS 庫存
- 最終 376 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 18 | HK$37.25 | HK$74.50 |
| 20 - 38 | HK$36.55 | HK$73.10 |
| 40 - 98 | HK$35.85 | HK$71.70 |
| 100 - 498 | HK$35.10 | HK$70.20 |
| 500 + | HK$34.40 | HK$68.80 |
* 參考價格
- RS庫存編號:
- 826-7541
- 製造零件編號:
- R6020ENX
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220FM | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Standards/Approvals | RoHS | |
| Length | 10.3mm | |
| Height | 15.4mm | |
| Width | 4.8mm | |
| Number of Elements per Chip | 1 | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220FM | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Standards/Approvals RoHS | ||
Length 10.3mm | ||
Height 15.4mm | ||
Width 4.8mm | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- TH
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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