IGBTs | Insulated Gate Bipolar Transistor | RS
最近搜索

    IGBTs

    IGBT (insulated-gate bipolar transistors) are semiconductors mainly used as switching devices to allow or stop power flow. They have many benefits as a result of being a cross between two of the most common transistors: Bipolar transistors and MOSFET. RS have a curated range of IGBTs from a multitude of trusted brands, including Infineon, ON Semiconductor, STMicroelectronics, and many more.

    How do IGBT transistors work?

    IGBT transistors are three-terminal devices which apply a voltage to a semiconductor, changing its properties to block power flow when it's in the off state and allow power flow in the on state. They are controlled by a metal oxide semiconductor gate structure and are widely used for switching electrical power in applications, such as welding, electric cars, air conditioners, trains, and uninterruptible power supplies.

    What are the different types of IGBT Transistors?

    There are various types of IGBT transistors and they are categorised by different parameters, such as maximum voltage, collector current, packaging type, and switching speed. The type of IGBT transistor you choose will vary depending on the exact power level and the applications being considered, and so it is important to know as many of your exact requirements as possible to choose the correct IGBT for your application.

    What is a difference between MOSFETs and IGBTs?

    An IGBT has a much lower forward voltage drop compared to a conventional MOSFET in higher blocking voltage rated devices. However, MOSFETs are characterised by a lower forward voltage at lower current densities due to the absence of diode Vf in the IGBT's output BJT.An IGBT transistor module (insulated-gate bipolar transistor) consists of one or more IGBTs and is used in many types of industrial equipment due to its reliability. IGBT transistors are a cross between bipolar junction transistors (BJTs) and MOSFETs. They are highly efficient and fast switching, plus they have high current and low saturation voltage characteristics.

    What is a typical application of IGBTs?

    IGBTs are widely used in electronic applications, including: consumer electronics, industrial technology, transportation and electric motors, aerospace electronic devices, and applications within the energy sector.

    2345 產品顯示為 IGBTs

    Infineon
    50 A
    1200 V
    20V
    20 mW
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Infineon
    40 A
    600 V
    +/-20V
    170 W
    1
    -
    PG-TO-220-3
    Through Hole
    -
    3
    -
    -
    -
    Infineon
    -
    -
    -
    188 W
    -
    -
    PG-TO220-3
    -
    -
    -
    -
    -
    -
    Infineon
    75 A
    1200 V
    20V
    20 mW
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Infineon
    -
    -
    -
    -
    -
    -
    AG-ECONO2B-211
    -
    -
    -
    -
    -
    -
    STMicroelectronics
    60 A
    600 V
    ±20V
    200 W
    -
    -
    TO-247
    Through Hole
    N
    3
    -
    Single
    15.75 x 5.15 x 24.45mm
    Infineon
    40 A
    600 V
    +/-20V
    170 W
    1
    -
    PG-TO247-3
    Through Hole
    -
    3
    -
    -
    -
    STMicroelectronics
    120 A
    650 V
    ±20V
    469 W
    -
    -
    TO-3P
    Through Hole
    N
    3
    1MHz
    Single
    15.8 x 5 x 20.1mm
    IXYS
    40 A
    1200 V
    ±20V
    278 W
    -
    -
    TO-247
    Through Hole
    N
    3
    50kHz
    Single
    16.26 x 5.3 x 21.46mm
    IXYS
    90 A
    1200 V
    ±20V
    625 W
    -
    -
    TO-247
    Through Hole
    N
    3
    50kHz
    Single
    16.26 x 5.3 x 21.46mm
    Infineon
    75 A
    1200 V
    ±20V
    395 W
    -
    Series
    34MM Module
    Panel Mount
    N
    7
    -
    Series
    94 x 34 x 30.2mm
    IXYS
    200 A
    1200 V
    ±20V
    1.25 kW
    -
    -
    TO-247
    Through Hole
    N
    3
    50kHz
    Single
    16.26 x 5.3 x 21.46mm
    Infineon
    60 A
    650 V
    ±20V
    176 W
    -
    -
    PG-TO247-3
    -
    -
    3
    -
    -
    -
    STMicroelectronics
    30 A
    600 V
    ±20V
    30 W
    -
    -
    TO-220FP
    Through Hole
    N
    3
    1MHz
    Single
    10.4 x 4.6 x 16.4mm
    Infineon
    40 A
    650 V
    ±20V
    230 W
    -
    -
    TO-247
    Through Hole
    N
    3
    -
    Single
    16.13 x 5.21 x 21.1mm
    IXYS
    280 A
    600 V
    ±20V
    300 W
    -
    -
    TO-247
    Through Hole
    N
    3
    40kHz
    Single
    16.26 x 5.3 x 21.46mm
    IXYS
    6 A
    1700 V
    ±20V
    -
    -
    -
    TO-247AD
    Through Hole
    N
    3
    -
    Single
    16.26 x 5.3 x 21.46mm
    Infineon
    75 A
    600 V
    ±20V
    428 W
    -
    -
    TO-247
    Through Hole
    N
    3
    -
    Single
    16.13 x 5.21 x 21.1mm
    IXYS
    188 A
    1200 V
    ±20V
    1150 W
    -
    -
    PLUS247
    Through Hole
    N
    3
    50kHz
    Single
    16.13 x 5.21 x 21.34mm
    Mitsubishi Electric
    100
    1200 V
    20V
    -
    2
    Dual
    Module
    PCB Mount
    N
    -
    -
    Dual Half Bridge
    -
    每頁顯示的結果