IGBTs | Insulated Gate Bipolar Transistor | RS
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    IGBTs

    IGBT (insulated-gate bipolar transistors) are semiconductors mainly used as switching devices to allow or stop power flow. They have many benefits as a result of being a cross between two of the most common transistors: Bipolar transistors and MOSFET. RS have a curated range of IGBTs from a multitude of trusted brands, including Infineon, ON Semiconductor, STMicroelectronics, and many more.

    How do IGBT transistors work?

    IGBT transistors are three-terminal devices which apply a voltage to a semiconductor, changing its properties to block power flow when it's in the off state and allow power flow in the on state. They are controlled by a metal oxide semiconductor gate structure and are widely used for switching electrical power in applications, such as welding, electric cars, air conditioners, trains, and uninterruptible power supplies.

    What are the different types of IGBT Transistors?

    There are various types of IGBT transistors and they are categorised by different parameters, such as maximum voltage, collector current, packaging type, and switching speed. The type of IGBT transistor you choose will vary depending on the exact power level and the applications being considered, and so it is important to know as many of your exact requirements as possible to choose the correct IGBT for your application.

    What is a difference between MOSFETs and IGBTs?

    An IGBT has a much lower forward voltage drop compared to a conventional MOSFET in higher blocking voltage rated devices. However, MOSFETs are characterised by a lower forward voltage at lower current densities due to the absence of diode Vf in the IGBT's output BJT.An IGBT transistor module (insulated-gate bipolar transistor) consists of one or more IGBTs and is used in many types of industrial equipment due to its reliability. IGBT transistors are a cross between bipolar junction transistors (BJTs) and MOSFETs. They are highly efficient and fast switching, plus they have high current and low saturation voltage characteristics.

    What is a typical application of IGBTs?

    IGBTs are widely used in electronic applications, including: consumer electronics, industrial technology, transportation and electric motors, aerospace electronic devices, and applications within the energy sector.

    2324 產品顯示為 IGBTs

    ROHM
    75 A
    650 V
    ±30V
    404 W
    1
    Single
    TO-247N
    Through Hole
    N
    3
    -
    Common Emitter
    -
    Mitsubishi Electric
    150
    1200 V
    20V
    -
    6
    3 Phase Bridge
    Module
    PCB Mount
    N
    -
    -
    3 Phase
    -
    STMicroelectronics
    80 A
    650 V
    ±20V
    283 W
    -
    -
    TO-247
    Through Hole
    N
    3
    -
    Single
    15.75 x 5.15 x 20.15mm
    Mitsubishi Electric
    100
    1200 V
    20V
    -
    6
    3 Phase Bridge
    Module
    PCB Mount
    N
    -
    -
    3 Phase
    -
    onsemi
    -
    1200 V
    ±20V
    186 W
    -
    Dual
    Q0BOOST
    Surface Mount
    N
    22
    -
    Dual
    66.2 x 32.8 x 11.9mm
    Mitsubishi Electric
    100 A
    600 V
    20V
    775 W
    2
    Dual
    94x34mm
    -
    -
    -
    -
    Dual
    -
    Infineon
    40 A
    1200 V
    20V
    500 W
    1
    -
    TO-247
    -
    N
    3
    -
    -
    -
    Mitsubishi Electric
    450
    1200 V
    20V
    -
    2
    Dual
    Module
    PCB Mount
    N
    -
    -
    Dual Half Bridge
    -
    Mitsubishi Electric
    600
    1200 V
    20V
    -
    2
    Dual
    Module
    PCB Mount
    N
    -
    -
    Dual Half Bridge
    -
    STMicroelectronics
    60 A
    600 V
    ±20V
    200 W
    -
    -
    TO-247
    Through Hole
    N
    3
    1MHz
    Single
    15.75 x 5.15 x 20.15mm
    Infineon
    29 A
    600 V
    ±20V
    94 W
    -
    Common Collector
    EASY1B
    PCB Mount
    N
    22
    1MHz
    3 Phase
    48 x 33.8 x 12mm
    Infineon
    1.5 kA
    1700 V
    20V
    20 mW
    2
    Dual
    PRIME3+
    -
    N
    10
    -
    Dual
    -
    STMicroelectronics
    40 A
    650 V
    ±20V
    168 W
    1
    -
    TO
    Through Hole
    N
    3
    -
    Single
    15.8 x 5 x 20.1mm
    Infineon
    80 A
    600 V
    ±20V
    250 W
    -
    -
    PG-TO263-3
    -
    -
    3
    -
    -
    -
    Mitsubishi Electric
    300 A
    600 V
    20V
    1.15 kW
    2
    Dual
    122x62mm
    -
    -
    -
    -
    Dual
    -
    Infineon
    45 A
    1200 V
    20V
    215 W
    4
    Series
    EASY1B
    -
    N
    13
    -
    Series
    -
    onsemi
    50 A
    650 V
    15V
    -
    6
    3 Phase
    SPM49-CAA
    Through Hole
    N
    -
    -
    -
    -
    Infineon
    30 A
    1200 V
    25 V, ±20 V
    200 W
    -
    -
    PG-TO247-3
    -
    -
    3
    -
    -
    -
    onsemi
    303 A
    1000 V
    ±20V
    592 W
    4
    -
    Q2PACK (Pb-Free/Halide-Free)
    -
    -
    -
    -
    -
    -
    onsemi
    -
    1200 V
    ±20V
    145 W
    -
    -
    Q13-TNPC
    Surface Mount
    N
    44
    -
    -
    83 x 37.9 x 12.5mm
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