MOSFETs | N-Channel | P-Channel | RS

MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

What are depletion and enhancement modes?

MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

How do MOSFETs work?

The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

N-Channel vs. P-Channel MOSFETs

N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

17729 產品顯示為 MOSFETs

STMicroelectronics
N
600 mA
450 V
3.8 Ω
SOT-223
MDmesh K3, SuperMESH3
Surface Mount
3
-30 V, +30 V
Enhancement
4.5V
3V
2 W
-
Single
6.7mm
-
1
Si
6 nC @ 10 V
3.7mm
Infineon
N
9.2 A
30 V
-
SO-8
HEXFET
Through Hole
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Microchip
N
260 mA
400 V
12 Ω
TO-243AA
TN2540
Surface Mount
3
20 V
Enhancement
2V
0.6V
1.6 W
-
Single
4.6mm
+150 °C
1
-
-
2.6mm
Vishay
P
7.4 A
40 V
78 mΩ
TSOP
SQ Rugged
Surface Mount
6
-12 V, +12 V
Enhancement
-
1.5V
5 W
-
Single
3.1mm
+175 °C
1
Si
10 nC @ 4.5 V
1.7mm
Vishay
P
16.2 A
150 V
125 mΩ
PowerPAK 1212-8S
-
Surface Mount
8
±20 V
Enhancement
4V
2V
65.8 W
-
Single
3.3mm
+150 °C
1
-
14.6 nC @ 10 V
3.3mm
Microchip
N
28 A
700 V
-
TO-247-4
-
Through Hole
4
-
-
-
-
-
-
-
-
-
1
SiC
-
-
Infineon
N
5 A
250 V
-
TO-252
-
Surface Mount
3
-
-
-
-
-
-
-
-
-
1
-
-
-
DiodesZetex
P
230 mA
45 V
14 Ω
E-Line
-
Through Hole
3
-20 V, +20 V
Enhancement
3.5V
-
700 mW
-
Single
4.77mm
+150 °C
1
Si
-
2.41mm
onsemi
P
800 mA
150 V
2.2 Ω
SOT-23
PowerTrench
Surface Mount
3
-25 V, +25 V
Enhancement
-
2V
1.5 W
-
Single
2.92mm
+150 °C
1
Si
2.9 nC @ 10 V
1.4mm
onsemi
P
4.1 A
20 V
170 mΩ
ChipFET
-
Surface Mount
8
-8 V, +8 V
Enhancement
1.5V
-
2.1 W
-
Isolated
3.1mm
+150 °C
2
Si
7.6 nC @ 4.5 V
1.7mm
Infineon
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Infineon
P
90 A
30 V
0.0041 O
TO-252
OptiMOS™
Surface Mount
3
-
Enhancement
0.3125V
-
-
-
-
-
-
1
-
-
-
Vishay
N
2.1 A
60 V
0.192 O
SOT-23
TrenchFET
Surface Mount
3
-
Enhancement
3V
-
-
-
-
-
-
1
-
-
-
Vishay
N
8 A
60 V
-
PowerPAK 1212-8
-
Surface Mount
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Infineon
N
9.2 A
30 V
-
SO-8
HEXFET
Through Hole
-
-
-
-
-
-
-
-
-
-
-
-
-
-
onsemi
P
2.7 A
500 V
4.9 Ω
TO-220AB
QFET
Through Hole
3
-30 V, +30 V
Enhancement
-
3V
85 W
-
Single
10.1mm
+150 °C
1
Si
18 nC @ 10 V
4.7mm
Vishay
N
29 A
600 V
125 mΩ
TO-247AC
E Series
Through Hole
3
-20 V, +20 V
Enhancement
-
2V
250 W
-
Single
15.87mm
+150 °C
1
Si
85 nC @ 10 V
5.31mm
Vishay
N
5 A
500 V
1.4 Ω
TO-220AB
-
Through Hole
3
-30 V, +30 V
Enhancement
-
2V
74 W
-
Single
10.41mm
+150 °C
1
Si
24 nC @ 10 V
4.7mm
Infineon
P
38 A
100 V
0.06 Ω
D2PAK (TO-263)
HEXFET
Surface Mount
3
-
-
4V
-
-
-
-
-
-
1
Si
-
-
Infineon
P
4.3 A
12 V
50 mΩ
Micro
HEXFET
Surface Mount
3
-8 V, +8 V
Enhancement
0.95V
0.4V
1.3 W
-
Single
3.04mm
+150 °C
1
Si
10 nC @ 5 V
1.4mm
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