Infineon IPD Type N-Channel MOSFET, 180 A, 40 V P, 3-Pin TO-252 IPD5N25S3430ATMA1
- RS庫存編號:
- 244-1594
- 製造零件編號:
- IPD5N25S3430ATMA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 5 件）*
HK$62.10
訂單超過 HK$250.00 免費送貨
有庫存
- 加上 2,335 件從 2026年4月27日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | HK$12.42 | HK$62.10 |
| 10 - 95 | HK$12.14 | HK$60.70 |
| 100 - 245 | HK$11.84 | HK$59.20 |
| 250 - 495 | HK$11.54 | HK$57.70 |
| 500 + | HK$11.30 | HK$56.50 |
* 參考價格
- RS庫存編號:
- 244-1594
- 製造零件編號:
- IPD5N25S3430ATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | P | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode P | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon MOSFET OptiMOSTM Power Transistor is a Green product RoHS compliant and is Automotive AEC Q101 qualified.
N-channel - Enhancement mode
MSL1 up to 260°C peak reflow
175°C operating temperature
100% Avalanche tested
相关链接
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