Infineon IPD N-Channel MOSFET, 180 A, 40 V P, 3-Pin TO-252 IPD5N25S3430ATMA1
- RS庫存編號:
- 244-1593
- 製造零件編號:
- IPD5N25S3430ATMA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 卷，共 2500 件）*
HK$13,660.00
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年1月13日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 2500 | HK$5.464 | HK$13,660.00 |
| 5000 - 5000 | HK$5.333 | HK$13,332.50 |
| 7500 + | HK$5.173 | HK$12,932.50 |
* 參考價格
- RS庫存編號:
- 244-1593
- 製造零件編號:
- IPD5N25S3430ATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | P | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode P | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon IPD Series MOSFET, 40V Maximum Drain Source Voltage, 180A Maximum Continuous Drain Current - IPD5N25S3430ATMA1
This MOSFET is a high-current switching transistor designed for demanding electronic power stages and automotive environments, delivering robust conduction and controlled gate drive behaviour across an extended temperature range.
Features and Benefits:
• 40V drain rating enables low-voltage power system switching
• 180A continuous drain current supports high-current loads
• 1.4mΩ low Rds(on) reduces conduction losses in heavy current paths
• 81W power dissipation allows sustained thermal loading
• 80nC typical gate charge facilitates predictable switching energy
• 20V gate tolerance accepts common gate-drive voltages
• 180A continuous drain current supports high-current loads
• 1.4mΩ low Rds(on) reduces conduction losses in heavy current paths
• 81W power dissipation allows sustained thermal loading
• 80nC typical gate charge facilitates predictable switching energy
• 20V gate tolerance accepts common gate-drive voltages
Applications
• Suitable for automotive powertrain inverter and motor stages
• Ideal for DC-DC converter output stage implementations
• Used with battery management modules in electric vehicles
• Can be used for high-current load switching on PCBs
• Used for surface-mount power assemblies in harsh environments
• Ideal for DC-DC converter output stage implementations
• Used with battery management modules in electric vehicles
• Can be used for high-current load switching on PCBs
• Used for surface-mount power assemblies in harsh environments
What thermal extremes can it tolerate during operation?
It operates across an ambient span from -55°C up to 175°C.
Which package and mounting style are provided for assembly?
It is supplied in a TO-252 package intended for surface mounting.
What polarity and conduction mode does it employ?
The device uses an N-type channel operating in P-mode configuration.
Is it compliant with environmental or industry standards?
It meets RoHS requirements and conforms to automotive AEC-Q101 criteria.
How many terminals are available for circuit connections?
It provides three pins for gate, drain and source connectivity.
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