Infineon IKZ50N65EH5XKSA1, Type N-Channel IGBT, 85 A 650 V, 4-Pin TO-247, Through Hole
- RS庫存編號:
- 215-6677
- 製造零件編號:
- IKZ50N65EH5XKSA1
- 製造商:
- Infineon
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查看批量定價選項小計（1 包，共 2 件）*
HK$106.80
訂單超過 HK$250.00 免費送貨
有庫存
- 加上 236 件從 2026年8月31日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | HK$53.40 | HK$106.80 |
| 10 - 98 | HK$52.10 | HK$104.20 |
| 100 - 248 | HK$50.75 | HK$101.50 |
| 250 - 498 | HK$49.50 | HK$99.00 |
| 500 + | HK$48.25 | HK$96.50 |
* 參考價格
- RS庫存編號:
- 215-6677
- 製造零件編號:
- IKZ50N65EH5XKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 85A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 273W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 4 | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC | |
| Series | High Speed Fifth Generation | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 85A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 273W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 4 | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC | ||
Series High Speed Fifth Generation | ||
Automotive Standard No | ||
The Infineon 650v duopack insulated-gate bipolar transistor and diode copacked with rapid 1 fast and soft antiparallel diode.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference