onsemi NXH40B120MNQ0SNG IGBT Module Q0PACK - Case 180AJ, Surface

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小計(1 托盤,共 24 件)*

HK$16,771.51

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24 - 24HK$698.813HK$16,771.51
48 - 48HK$684.838HK$16,436.11
72 +HK$671.142HK$16,107.41

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RS庫存編號:
245-6981
製造零件編號:
NXH40B120MNQ0SNG
製造商:
onsemi
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品牌

onsemi

Product Type

IGBT Module

Maximum Power Dissipation Pd

118W

Number of Transistors

2

Package Type

Q0PACK - Case 180AJ

Mount Type

Surface

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Width

32.8mm

Standards/Approvals

RoHS

Series

NXH40B120MNQ0SNG

Length

55.2mm

Height

13.9mm

Automotive Standard

No

Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode Nickel Plated DBC


The ON Semiconductor 3 Channel Boost Q1 Power Module is a power module containing a dual boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

1200 V 40 m SiC MOSFETs

Low Reverse Recovery and Fast Switching SiC Diodes

1200 V Bypass and Anti parallel Diodes

Low Inductive Layout Solderable Pins Thermistor

This Device is Pb Free, Halogen Free/BFR Free and is RoHS Compliant

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