onsemi NXH40B120MNQ0SNG IGBT Module Q0PACK - Case 180AJ, Surface
- RS庫存編號:
- 245-6982
- 製造零件編號:
- NXH40B120MNQ0SNG
- 製造商:
- onsemi
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HK$699.20
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年3月01日 發貨
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單位 | 每單位 |
|---|---|
| 1 - 1 | HK$699.20 |
| 2 + | HK$685.20 |
* 參考價格
- RS庫存編號:
- 245-6982
- 製造零件編號:
- NXH40B120MNQ0SNG
- 製造商:
- onsemi
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | IGBT Module | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation Pd | 118W | |
| Package Type | Q0PACK - Case 180AJ | |
| Mount Type | Surface | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 55.2mm | |
| Width | 32.8mm | |
| Series | NXH40B120MNQ0SNG | |
| Height | 13.9mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type IGBT Module | ||
Number of Transistors 2 | ||
Maximum Power Dissipation Pd 118W | ||
Package Type Q0PACK - Case 180AJ | ||
Mount Type Surface | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 55.2mm | ||
Width 32.8mm | ||
Series NXH40B120MNQ0SNG | ||
Height 13.9mm | ||
Automotive Standard No | ||
Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode Nickel Plated DBC
The ON Semiconductor 3 Channel Boost Q1 Power Module is a power module containing a dual boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.
1200 V 40 m SiC MOSFETs
Low Reverse Recovery and Fast Switching SiC Diodes
1200 V Bypass and Anti parallel Diodes
Low Inductive Layout Solderable Pins Thermistor
This Device is Pb Free, Halogen Free/BFR Free and is RoHS Compliant
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