STMicroelectronics SCT N-Channel MOSFET, 40 A, 1.2 kV Enhancement, 4-Pin Hip-247-4 SCT040W120G3-4
- RS庫存編號:
- 214-957
- 製造零件編號:
- SCT040W120G3-4
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 管，共 30 件）*
HK$4,852.71
訂單超過 HK$250.00 免費送貨
最後的 RS 庫存
- 最終 30 個，準備發貨
單位 | 每單位 | 每管* |
|---|---|---|
| 30 + | HK$161.757 | HK$4,852.71 |
* 參考價格
- RS庫存編號:
- 214-957
- 製造零件編號:
- SCT040W120G3-4
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | Hip-247-4 | |
| Series | SCT | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Forward Voltage Vf | 1.2kV | |
| Maximum Gate Source Voltage Vgs | -10V, 22V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 312W | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | RoHS, ECOPACK2 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type Hip-247-4 | ||
Series SCT | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Forward Voltage Vf 1.2kV | ||
Maximum Gate Source Voltage Vgs -10V, 22V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 312W | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals RoHS, ECOPACK2 | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
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