Infineon 650V CoolMOS CFD7 SJ Power Device N-Channel MOSFET, 63 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IPT65R040CFD7XTMA1
- RS庫存編號:
- 284-900
- 製造零件編號:
- IPT65R040CFD7XTMA1
- 製造商:
- Infineon
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HK$88.80
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|---|---|
| 1 - 9 | HK$88.80 |
| 10 - 99 | HK$80.00 |
| 100 - 499 | HK$73.70 |
| 500 - 999 | HK$68.40 |
| 1000 + | HK$61.40 |
* 參考價格
- RS庫存編號:
- 284-900
- 製造零件編號:
- IPT65R040CFD7XTMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 63A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-HSOF-8 | |
| Series | 650V CoolMOS CFD7 SJ Power Device | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 347W | |
| Typical Gate Charge Qg @ Vgs | 97nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 63A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-HSOF-8 | ||
Series 650V CoolMOS CFD7 SJ Power Device | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 347W | ||
Typical Gate Charge Qg @ Vgs 97nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC | ||
The Infineon MOSFET is a cutting edge MOSFET designed for high efficiency switching applications. This product exemplifies superior thermal performance, making it Ideal for use in demanding environments such as server and telecom sectors. With its innovative CoolMOS CFD7 technology, it promises outstanding reliability and efficiency, particularly in resonant switching topologies, including LLC and phase shift full bridge applications. This MOSFET advances upon its predecessor with improved switching capabilities and a low on state resistance, optimising power density and enhancing the overall effectiveness of your designs. Built to meet the rigorous standards of industrial applications, the device provides excellent hard commutation ruggedness while maintaining exceptional performance across a broad temperature range.
Ultra fast body diode minimises switching losses
Best in class RDS(on) for efficiency improvements
Robust against hard commutation for reliability
Handles increased bus voltage for safety
Optimised for high power density in Compact designs
Excels in light load conditions for industrial SMPS applications
相关链接
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