Infineon IMBG65 N-Channel MOSFET, 58 A, 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R033M2H
- RS庫存編號:
- 351-961
- 製造零件編號:
- IMBG65R033M2H
- 製造商:
- Infineon
可享批量折扣
查看批量定價選項小計（1 件）*
HK$115.00
訂單超過 HK$250.00 免費送貨
有庫存
- 999 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 9 | HK$115.00 |
| 10 - 99 | HK$103.40 |
| 100 - 499 | HK$95.60 |
| 500 - 999 | HK$88.60 |
| 1000 + | HK$79.40 |
* 參考價格
- RS庫存編號:
- 351-961
- 製造零件編號:
- IMBG65R033M2H
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Output Power | 227W | |
| Package Type | PG-TO263-7 | |
| Series | IMBG65 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 9.45mm | |
| Height | 4.5mm | |
| Standards/Approvals | JEDEC | |
| Length | 10.2mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 650V | ||
Output Power 227W | ||
Package Type PG-TO263-7 | ||
Series IMBG65 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 9.45mm | ||
Height 4.5mm | ||
Standards/Approvals JEDEC | ||
Length 10.2mm | ||
Automotive Standard No | ||
The Infineon CoolSiC MOSFET G2 in a D2PAK-7 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.
Enables BOM savings
Highest reliability
Enables top efficiency and power density
Ease of use
Full compatibility with existing vendors
Allows designs without fan or heatsink
相关链接
- Infineon IMBG65 N-Channel MOSFET 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R009M1HXTMA1
- Infineon IMBG65 N-Channel MOSFET 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R060M2H
- Infineon IMBG65 N-Channel MOSFET 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R010M2H
- Infineon IMBG65 N-Channel MOSFET 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R026M2H
- Infineon AIK 1 N-Channel MOSFET 7-Pin PG-TO263-7 AIKBE50N65RF5ATMA1
- Infineon CoolSiC N-Channel MOSFET 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R015M2HXTMA1
- Infineon CoolSiC N-Channel MOSFET 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R020M2HXTMA1
- Infineon CoolSiC N-Channel MOSFET 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R050M2HXTMA1