Infineon IMBG65 N-Channel MOSFET, 170 A, 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R009M1HXTMA1

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HK$403.70

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RS庫存編號:
351-987
製造零件編號:
IMBG65R009M1HXTMA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

170A

Output Power

555W

Maximum Drain Source Voltage Vds

650V

Series

IMBG65

Package Type

PG-TO263-7

Mount Type

Surface

Pin Count

7

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

10.2mm

Standards/Approvals

JEDEC

Height

4.5mm

Width

9.45mm

Automotive Standard

No

The Infineon CoolSiC is built over the solid silicon carbide technology. Leveraging the wide bandgap SiC material characteristics, it offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.

Optimized switching behaviour at higher currents

Commutation robust fast body diode with low Qfr

Superior gate oxide reliability

Increased avalanche capability

Compatible with standard drivers

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