Infineon IMBG65 N-Channel MOSFET, 68 A, 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R026M2H
- RS庫存編號:
- 351-962
- 製造零件編號:
- IMBG65R026M2H
- 製造商:
- Infineon
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HK$130.70
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單位 | 每單位 |
|---|---|
| 1 - 9 | HK$130.70 |
| 10 - 99 | HK$117.70 |
| 100 + | HK$108.50 |
* 參考價格
- RS庫存編號:
- 351-962
- 製造零件編號:
- IMBG65R026M2H
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 68A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Output Power | 263W | |
| Package Type | PG-TO263-7 | |
| Series | IMBG65 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.5mm | |
| Length | 10.2mm | |
| Width | 9.45mm | |
| Standards/Approvals | JEDEC | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 68A | ||
Maximum Drain Source Voltage Vds 650V | ||
Output Power 263W | ||
Package Type PG-TO263-7 | ||
Series IMBG65 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 4.5mm | ||
Length 10.2mm | ||
Width 9.45mm | ||
Standards/Approvals JEDEC | ||
Automotive Standard No | ||
The Infineon CoolSiC MOSFET G2 in a D2PAK-7 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.
Enables BOM savings
Highest reliability
Enables top efficiency and power density
Ease of use
Full compatibility with existing vendors
Allows designs without fan or heatsink
相关链接
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