Infineon CoolMOS CE N-Channel MOSFET, 4.8 A, 550 V Enhancement, 4-Pin SOT-223 IPN50R1K4CEATMA1

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小計（1 包，共 25 件）*

HK$99.80

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25 - 725HK$3.992HK$99.80
750 - 1475HK$3.896HK$97.40
1500 +HK$3.836HK$95.90

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包裝方式：
RS庫存編號:
130-0911
製造零件編號:
IPN50R1K4CEATMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.8A

Maximum Drain Source Voltage Vds

550V

Series

CoolMOS CE

Package Type

SOT-223

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

1.4Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

-30V, +30V

Minimum Operating Temperature

-40°C

Maximum Power Dissipation Pd

5W

Typical Gate Charge Qg @ Vgs

8.2nC

Forward Voltage Vf

830mV

Maximum Operating Temperature

150°C

Height

1.7mm

Length

6.7mm

Standards/Approvals

No

Width

3.7mm

Automotive Standard

No

Infineon CoolMOS™ CE Power MOSFET


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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