Toshiba DTMOSIV Type N-Channel MOSFET, 11.1 A, 650 V Enhancement, 3-Pin TO-252 TK11P65W,RQ(S
- RS庫存編號:
- 133-2796
- 製造零件編號:
- TK11P65W,RQ(S
- 製造商:
- Toshiba
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可享批量折扣
查看批量定價選項小計（1 包，共 5 件）*
HK$63.60
訂單超過 HK$250.00 免費送貨
最後的 RS 庫存
- 140 件準備從其他地點送貨
- 最終 1,435 件從 2026年6月08日 起發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 20 | HK$12.72 | HK$63.60 |
| 25 - 45 | HK$12.40 | HK$62.00 |
| 50 - 245 | HK$12.10 | HK$60.50 |
| 250 - 495 | HK$11.80 | HK$59.00 |
| 500 + | HK$11.50 | HK$57.50 |
* 參考價格
- RS庫存編號:
- 133-2796
- 製造零件編號:
- TK11P65W,RQ(S
- 製造商:
- Toshiba
規格
產品概覽和技術數據資料表
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 11.1A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | DTMOSIV | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 440mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.7V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 100W | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.3mm | |
| Length | 6.6mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 11.1A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series DTMOSIV | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 440mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.7V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 100W | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Operating Temperature 150°C | ||
Height 2.3mm | ||
Length 6.6mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET Transistors, Toshiba
相关链接
- Toshiba DTMOSIV Type N-Channel MOSFET 650 V EnhancementRQ(S
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