Toshiba DTMOSIV N-Channel MOSFET, 6.8 A, 650 V Enhancement, 3-Pin TO-252 TK7P65W,RQ(S
- RS庫存編號:
- 133-2801
- 製造零件編號:
- TK7P65W,RQ(S
- 製造商:
- Toshiba
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HK$50.00
訂單超過 HK$250.00 免費送貨
有庫存
- 120 件準備從其他地點送貨
- 加上 1,340 件從 2026年9月14日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | HK$5.00 | HK$50.00 |
| 50 - 90 | HK$4.90 | HK$49.00 |
| 100 - 490 | HK$4.82 | HK$48.20 |
| 500 - 990 | HK$4.73 | HK$47.30 |
| 1000 + | HK$4.65 | HK$46.50 |
* 參考價格
- RS庫存編號:
- 133-2801
- 製造零件編號:
- TK7P65W,RQ(S
- 製造商:
- Toshiba
規格
產品概覽和技術數據資料表
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 6.8A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-252 | |
| Series | DTMOSIV | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 800mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Power Dissipation Pd | 60W | |
| Forward Voltage Vf | -1.7V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.3mm | |
| Width | 6.1mm | |
| Standards/Approvals | No | |
| Length | 6.6mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Toshiba | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 6.8A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-252 | ||
Series DTMOSIV | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 800mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Power Dissipation Pd 60W | ||
Forward Voltage Vf -1.7V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Height 2.3mm | ||
Width 6.1mm | ||
Standards/Approvals No | ||
Length 6.6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
相关链接
- Toshiba DTMOSIV Type N-Channel MOSFET 650 V EnhancementRQ(S
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